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IRF3708S-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
IRF3708S-VB is a high-performance N-channel MOSFET in TO263 package. It has a maximum drain-source voltage of 20V and a gate voltage range of ±20V, with a threshold voltage between 0.5V and 1.5V, suitable for low gate drive voltage applications. This MOSFET uses advanced trench technology to provide very low on-resistance, making it excellent in a variety of high-efficiency applications. IRF3708S-VB supports drain currents up to 85A and is suitable for electronic circuits that require high current and low power consumption.
IRF3708S-VB is a high-performance N-channel MOSFET in TO263 package. It has a maximum drain-source voltage of 20V and a gate voltage range of ±20V, with a threshold voltage between 0.5V and 1.5V, suitable for low gate drive voltage applications. This MOSFET uses advanced trench technology to provide very low on-resistance, making it excellent in a variety of high-efficiency applications. IRF3708S-VB supports drain currents up to 85A and is suitable for electronic circuits that require high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | 9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 20V | 0.5~1.5V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=2.5V
- 6mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench Technology
- **Package type**: TO263
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=2.5V
- 6mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench Technology
Domain and module applications：
Applications and module examples:
1. **Portable electronics**: Due to its low on-resistance and wide threshold voltage range, the IRF3708S-VB is ideal for power switching in portable electronics, such as smartphones, tablets, and wearable devices. In these applications, MOSFETs can operate efficiently at lower gate voltages, saving space and reducing power consumption.
2. **DC-DC converters**: In DC-DC converters for low-voltage applications, the IRF3708S-VB provides efficient current control and conversion, ensuring power stability and efficiency. Its low RDS(ON) minimizes energy losses and is suitable for use in power modules for laptops and consumer electronics.
3. **Automotive electronic systems**: In automotive electronics, this MOSFET can be used for power management and load switching, especially in applications that require low gate voltage drive. Its high current handling capability and low on-resistance can improve the efficiency of automotive motors and the performance of battery management systems.
4. **Industrial Control**: IRF3708S-VB is also widely used in industrial control systems, including motor drives, power switches for industrial control equipment, etc. Its high current capability and low power consumption characteristics help improve the overall efficiency and stability of the system and meet the needs of high-load working environments.
1. **Portable electronics**: Due to its low on-resistance and wide threshold voltage range, the IRF3708S-VB is ideal for power switching in portable electronics, such as smartphones, tablets, and wearable devices. In these applications, MOSFETs can operate efficiently at lower gate voltages, saving space and reducing power consumption.
2. **DC-DC converters**: In DC-DC converters for low-voltage applications, the IRF3708S-VB provides efficient current control and conversion, ensuring power stability and efficiency. Its low RDS(ON) minimizes energy losses and is suitable for use in power modules for laptops and consumer electronics.
3. **Automotive electronic systems**: In automotive electronics, this MOSFET can be used for power management and load switching, especially in applications that require low gate voltage drive. Its high current handling capability and low on-resistance can improve the efficiency of automotive motors and the performance of battery management systems.
4. **Industrial Control**: IRF3708S-VB is also widely used in industrial control systems, including motor drives, power switches for industrial control equipment, etc. Its high current capability and low power consumption characteristics help improve the overall efficiency and stability of the system and meet the needs of high-load working environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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