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IRF3707ZS-VB Product details
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IRF3707ZS-VB MOSFET Product Introduction
The IRF3707ZS-VB is a single N-channel power MOSFET in a TO-263 package based on advanced trench technology. It has extremely low on-resistance and high current handling capability, making it particularly suitable for high-efficiency power management and drive applications. This MOSFET has a drain-source voltage of 30V and a gate-source voltage range of ±20V, making it an excellent performer in applications requiring high efficiency and high current.
The IRF3707ZS-VB is a single N-channel power MOSFET in a TO-263 package based on advanced trench technology. It has extremely low on-resistance and high current handling capability, making it particularly suitable for high-efficiency power management and drive applications. This MOSFET has a drain-source voltage of 30V and a gate-source voltage range of ±20V, making it an excellent performer in applications requiring high efficiency and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package type**: TO-263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 98A
8. **Technology type**: Trench
1. **Package type**: TO-263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 98A
8. **Technology type**: Trench
Domain and module applications：
Application fields and applicable modules
1. **High-efficiency power conversion**: IRF3707ZS-VB is suitable for various high-efficiency DC-DC converters due to its ultra-low on-resistance. It can significantly reduce power loss and improve energy conversion efficiency. It is widely used in computer power supplies, communication equipment and power modules of consumer electronics.
2. **Electric vehicle drive**: In electric vehicles and motor control systems, the high current handling capability and low on-resistance of this MOSFET make it an ideal motor drive switching element. It can provide efficient switching operation in the motor drive bridge circuit of electric vehicles, improving the overall performance and endurance of electric vehicles.
3. **High-efficiency synchronous rectification**: IRF3707ZS-VB performs well in synchronous rectification applications. Its low RDS(ON) can effectively reduce rectification losses. It is suitable for use in high-efficiency power adapters and LED driver power supplies to improve system efficiency and reduce energy waste.
4. **High-power battery management**: In battery management systems (BMS), the high current carrying capability and low on-resistance of this MOSFET enable it to provide robust current control and protection functions, making it particularly suitable for applications such as electric vehicles and battery energy storage systems that require precise current regulation and efficient energy management.
1. **High-efficiency power conversion**: IRF3707ZS-VB is suitable for various high-efficiency DC-DC converters due to its ultra-low on-resistance. It can significantly reduce power loss and improve energy conversion efficiency. It is widely used in computer power supplies, communication equipment and power modules of consumer electronics.
2. **Electric vehicle drive**: In electric vehicles and motor control systems, the high current handling capability and low on-resistance of this MOSFET make it an ideal motor drive switching element. It can provide efficient switching operation in the motor drive bridge circuit of electric vehicles, improving the overall performance and endurance of electric vehicles.
3. **High-efficiency synchronous rectification**: IRF3707ZS-VB performs well in synchronous rectification applications. Its low RDS(ON) can effectively reduce rectification losses. It is suitable for use in high-efficiency power adapters and LED driver power supplies to improve system efficiency and reduce energy waste.
4. **High-power battery management**: In battery management systems (BMS), the high current carrying capability and low on-resistance of this MOSFET enable it to provide robust current control and protection functions, making it particularly suitable for applications such as electric vehicles and battery energy storage systems that require precise current regulation and efficient energy management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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