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IRF3704STRL-VB Product details
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Product Introduction
**IRF3704STRL-VB** is a high-performance N-Channel MOSFET in TO263 package, designed for high current and high efficiency applications. This MOSFET adopts Trench technology, has excellent switching performance and low on-resistance, and can provide up to 70A of leakage current at a drain-source voltage of 30V. The low on-resistance and low threshold voltage of IRF3704STRL-VB make it very suitable for applications requiring high efficiency and low power loss.
**IRF3704STRL-VB** is a high-performance N-Channel MOSFET in TO263 package, designed for high current and high efficiency applications. This MOSFET adopts Trench technology, has excellent switching performance and low on-resistance, and can provide up to 70A of leakage current at a drain-source voltage of 30V. The low on-resistance and low threshold voltage of IRF3704STRL-VB make it very suitable for applications requiring high efficiency and low power loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: IRF3704STRL-VB
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench
- **Model**: IRF3704STRL-VB
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
The features of the **IRF3704STRL-VB** enable it to excel in multiple fields and modules:
1. **Power Management**: In switching power supplies and DC-DC converters, the low on-resistance and high current capability of the IRF3704STRL-VB help improve power conversion efficiency, reduce power loss, and enhance overall system stability and performance.
2. **Electric Vehicle**: In the battery management system and drive circuits of electric vehicles, this MOSFET can efficiently handle current and voltage, ensuring high efficiency and reliability of the battery system while reducing system heat generation.
3. **Motor Drive**: Suitable for a variety of motor drive systems, including industrial motors and automation equipment. Its high current carrying capacity and low on-resistance enable it to effectively improve power transmission efficiency and system stability when controlling motors.
4. **High-power switching applications**: In applications that require efficient switching control, such as high-power amplifiers and inverters, this MOSFET provides good switching performance and low heat loss, ensuring stable operation of the system under high-power operation.
In summary, **IRF3704STRL-VB** is a high-efficiency, high-current carrying capacity N-Channel MOSFET suitable for a variety of applications requiring efficient power management and low power loss. Its excellent on-resistance and high current handling capability make it excellent in power management, electric vehicles, motor drives and high-power switching applications.
The features of the **IRF3704STRL-VB** enable it to excel in multiple fields and modules:
1. **Power Management**: In switching power supplies and DC-DC converters, the low on-resistance and high current capability of the IRF3704STRL-VB help improve power conversion efficiency, reduce power loss, and enhance overall system stability and performance.
2. **Electric Vehicle**: In the battery management system and drive circuits of electric vehicles, this MOSFET can efficiently handle current and voltage, ensuring high efficiency and reliability of the battery system while reducing system heat generation.
3. **Motor Drive**: Suitable for a variety of motor drive systems, including industrial motors and automation equipment. Its high current carrying capacity and low on-resistance enable it to effectively improve power transmission efficiency and system stability when controlling motors.
4. **High-power switching applications**: In applications that require efficient switching control, such as high-power amplifiers and inverters, this MOSFET provides good switching performance and low heat loss, ensuring stable operation of the system under high-power operation.
In summary, **IRF3704STRL-VB** is a high-efficiency, high-current carrying capacity N-Channel MOSFET suitable for a variety of applications requiring efficient power management and low power loss. Its excellent on-resistance and high current handling capability make it excellent in power management, electric vehicles, motor drives and high-power switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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