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IRF3704SPBF-VB Product details
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Product Introduction
**IRF3704SPBF-VB** is a high-performance unipolar N-channel MOSFET in TO263 package and based on Trench technology. This MOSFET is designed for medium voltage and high current applications and provides excellent conduction performance and switching characteristics. Its maximum drain-source voltage is 30V and its maximum drain current is 70A. The on-resistance of IRF3704SPBF-VB is 6mΩ at VGS=10V, ensuring low power operation under high current conditions. The threshold voltage of this MOSFET is 1.7V, which is suitable for use in a variety of power supply and switching applications requiring high efficiency and low power consumption.
**IRF3704SPBF-VB** is a high-performance unipolar N-channel MOSFET in TO263 package and based on Trench technology. This MOSFET is designed for medium voltage and high current applications and provides excellent conduction performance and switching characteristics. Its maximum drain-source voltage is 30V and its maximum drain current is 70A. The on-resistance of IRF3704SPBF-VB is 6mΩ at VGS=10V, ensuring low power operation under high current conditions. The threshold voltage of this MOSFET is 1.7V, which is suitable for use in a variety of power supply and switching applications requiring high efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 70A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 8mΩ @ VGS=4.5V
- 6mΩ @ VGS=10V
- **Maximum drain current (ID)**: 70A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
The characteristics of the **IRF3704SPBF-VB** MOSFET make it excel in the following areas and modules:
1. **High-efficiency DC-DC converters**: In DC-DC converters, the low on-resistance and high current capability of the IRF3704SPBF-VB make it an ideal switching element. It can improve conversion efficiency and reduce power consumption, especially in application scenarios that require high current, such as computer power modules and power management systems.
2. **Electric and hybrid vehicles**: In battery management systems for electric and hybrid vehicles, the IRF3704SPBF-VB is able to handle higher current loads, ensuring efficient operation of the battery and motor. Its high current handling capability and low on-resistance are important for improving the overall energy efficiency and performance of the vehicle.
3. **Motor drive control**: In industrial motor drive systems, this MOSFET can be used as a switching element in the motor drive circuit. Its high current handling capability and stable switching characteristics can support the smooth operation of high-power motors and improve the reliability and efficiency of the system.
4. **LED lighting driver**: In high-power LED lighting systems, the low on-resistance of IRF3704SPBF-VB can effectively reduce power consumption and heat generation, and improve the energy efficiency of the system. It can provide a stable current to the LED to ensure the brightness and life of the LED.
5. **Battery protection circuit**: In the battery protection system, the high current capability and low on-resistance of this MOSFET make it suitable for use as a protection switch for the battery. It can effectively prevent overcurrent and short circuit, ensuring the safety and stable operation of the battery.
In summary, the high current handling capability, low on-resistance and reliable switching performance of **IRF3704SPBF-VB** MOSFET make it excellent in multiple high-efficiency power and high-power applications, meeting the needs of modern electronic devices for high performance and low power consumption.
The characteristics of the **IRF3704SPBF-VB** MOSFET make it excel in the following areas and modules:
1. **High-efficiency DC-DC converters**: In DC-DC converters, the low on-resistance and high current capability of the IRF3704SPBF-VB make it an ideal switching element. It can improve conversion efficiency and reduce power consumption, especially in application scenarios that require high current, such as computer power modules and power management systems.
2. **Electric and hybrid vehicles**: In battery management systems for electric and hybrid vehicles, the IRF3704SPBF-VB is able to handle higher current loads, ensuring efficient operation of the battery and motor. Its high current handling capability and low on-resistance are important for improving the overall energy efficiency and performance of the vehicle.
3. **Motor drive control**: In industrial motor drive systems, this MOSFET can be used as a switching element in the motor drive circuit. Its high current handling capability and stable switching characteristics can support the smooth operation of high-power motors and improve the reliability and efficiency of the system.
4. **LED lighting driver**: In high-power LED lighting systems, the low on-resistance of IRF3704SPBF-VB can effectively reduce power consumption and heat generation, and improve the energy efficiency of the system. It can provide a stable current to the LED to ensure the brightness and life of the LED.
5. **Battery protection circuit**: In the battery protection system, the high current capability and low on-resistance of this MOSFET make it suitable for use as a protection switch for the battery. It can effectively prevent overcurrent and short circuit, ensuring the safety and stable operation of the battery.
In summary, the high current handling capability, low on-resistance and reliable switching performance of **IRF3704SPBF-VB** MOSFET make it excellent in multiple high-efficiency power and high-power applications, meeting the needs of modern electronic devices for high performance and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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