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IRF3007S-VB Product details

Product introduction:

# Product Introduction

The IRF3007S-VB is a high-performance N-Channel MOSFET in a TO263 package, designed for applications that require high current and low on-resistance. With a maximum drain-source voltage (V_DS) of 80V and a gate-source voltage (V_GS) of ±20V, this MOSFET is suitable for medium and high voltage power supplies and load control. Its gate-source threshold voltage (V_th) is 3V, ensuring stable conduction even at low voltages. At gate-source voltages of 4.5V and 10V, the on-resistance (R_DS(on)) is 10mΩ and 6mΩ respectively, providing efficient power transfer. The maximum continuous current (I_D) is 120A, giving it excellent performance when handling high currents.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 80V 3V 120A 6mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 80V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 80V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage(V_DS)**: 80V
- **Maximum gate-source voltage(V_GS)**: ±20V
- **Gate-source threshold voltage(V_th)**: 3V
- **On-resistance(R_DS(on))**:
- 10mΩ @ V_GS = 4.5V
- 6mΩ @ V_GS = 10V
- **Maximum continuous current(I_D)**: 120A
- **Technology**: Trench

Domain and module applications:

Applications and Module Examples

1. **High-efficiency power conversion**: The low on-resistance and high current handling capability of the IRF3007S-VB make it ideal for use in efficient DC-DC converters and power management modules. Its low power consumption helps improve the overall efficiency of the power system and reduces heat generation.

2. **Electric Vehicles**: In the powertrain and battery management modules of electric vehicles, this MOSFET can effectively handle high currents to ensure efficient power conversion and stable power supply. Its high current capability and low on-resistance help improve the performance and endurance of electric vehicles.

3. **Industrial Automation**: In industrial automation equipment, the IRF3007S-VB can be used as a switch and drive control for high-power motors. Its high current handling capability and low on-resistance enable it to operate stably in harsh industrial environments.

4. **Power Amplifier**: In power amplifier designs, this MOSFET is suitable for high-power output stages. Its extremely low on-resistance helps reduce power loss and improve the efficiency and stability of the audio system.

5. **Switching Power Supply**: The high current capability and low on-resistance of the IRF3007S-VB make it an ideal choice for switching power supply design. It can effectively control high current switches to ensure efficient operation and stability of the power supply system.

These application examples demonstrate the advantages of the IRF3007S-VB in applications with high current and high efficiency requirements, making it play an important role in power management, industrial automation, and power amplifiers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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