中文
English
IRF3007SPBF-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**IRF3007SPBF-VB** is a high-performance N-Channel MOSFET in TO263 package. It utilizes advanced Trench technology and is designed for high voltage and high current applications. With a drain-source voltage of up to 80V, the IRF3007SPBF-VB is capable of handling larger currents, and its low on-resistance further improves power transmission efficiency. This MOSFET is suitable for power management and switching applications that require high efficiency and high reliability.
**IRF3007SPBF-VB** is a high-performance N-Channel MOSFET in TO263 package. It utilizes advanced Trench technology and is designed for high voltage and high current applications. With a drain-source voltage of up to 80V, the IRF3007SPBF-VB is capable of handling larger currents, and its low on-resistance further improves power transmission efficiency. This MOSFET is suitable for power management and switching applications that require high efficiency and high reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: IRF3007SPBF-VB
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 120A
- **Technology**: Trench
- **Model**: IRF3007SPBF-VB
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
The performance characteristics of the **IRF3007SPBF-VB** enable it to excel in the following application areas:
1. **Power Management**: Commonly used in switching power supplies and DC-DC converters, this MOSFET can significantly reduce power losses and improve system efficiency with its low RDS(ON) and high current capability, while optimizing thermal management of the power supply.
2. **Electric Vehicles**: In the battery management system, drive circuit and charging module of electric vehicles, the high current handling capability and low on-resistance of the IRF3007SPBF-VB help improve the efficiency and stability of the electric vehicle's power system.
3. **Motor Drive**: In high-power motor drive systems, such as industrial motors and automation equipment, the high current carrying capability and low on-resistance of this MOSFET can effectively improve the performance and power transmission efficiency of the motor.
4. **High-power amplifier**: In high-power applications such as audio amplifiers and RF amplifiers, the low on-resistance of the IRF3007SPBF-VB can reduce power loss, thereby maintaining efficient operation of the system and improving the stability and overall performance of the device.
In summary, the high voltage and high current handling capabilities of the IRF3007SPBF-VB make it an excellent choice for electronic systems that require high performance and high reliability, making it an ideal choice for high-power applications.
The performance characteristics of the **IRF3007SPBF-VB** enable it to excel in the following application areas:
1. **Power Management**: Commonly used in switching power supplies and DC-DC converters, this MOSFET can significantly reduce power losses and improve system efficiency with its low RDS(ON) and high current capability, while optimizing thermal management of the power supply.
2. **Electric Vehicles**: In the battery management system, drive circuit and charging module of electric vehicles, the high current handling capability and low on-resistance of the IRF3007SPBF-VB help improve the efficiency and stability of the electric vehicle's power system.
3. **Motor Drive**: In high-power motor drive systems, such as industrial motors and automation equipment, the high current carrying capability and low on-resistance of this MOSFET can effectively improve the performance and power transmission efficiency of the motor.
4. **High-power amplifier**: In high-power applications such as audio amplifiers and RF amplifiers, the low on-resistance of the IRF3007SPBF-VB can reduce power loss, thereby maintaining efficient operation of the system and improving the stability and overall performance of the device.
In summary, the high voltage and high current handling capabilities of the IRF3007SPBF-VB make it an excellent choice for electronic systems that require high performance and high reliability, making it an ideal choice for high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
