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IRF2903ZS-VB Product details
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Product Introduction
**IRF2903ZS-VB** is a high-performance N-Channel MOSFET in TO263 package. This MOSFET adopts advanced Trench technology and is designed for high current applications with extremely low on-resistance. It is able to provide excellent performance in applications with high current and high efficiency requirements. The IRF2903ZS-VB has a drain-source voltage of 30V and supports a maximum drain current of 260A, making it very suitable for high power and high efficiency electronic systems.
**IRF2903ZS-VB** is a high-performance N-Channel MOSFET in TO263 package. This MOSFET adopts advanced Trench technology and is designed for high current applications with extremely low on-resistance. It is able to provide excellent performance in applications with high current and high efficiency requirements. The IRF2903ZS-VB has a drain-source voltage of 30V and supports a maximum drain current of 260A, making it very suitable for high power and high efficiency electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: IRF2903ZS-VB
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 1.6mΩ @ VGS = 4.5V
- 1.4mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 260A
- **Technology**: Trench
- **Model**: IRF2903ZS-VB
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 1.6mΩ @ VGS = 4.5V
- 1.4mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 260A
- **Technology**: Trench
Domain and module applications：
Applications and modules
The excellent performance of **IRF2903ZS-VB** enables it to perform well in multiple application areas:
1. **Power management**: In switching power supplies and DC-DC converters, the low on-resistance and high current handling capability of this MOSFET enable it to effectively reduce power loss, improve system efficiency, and ensure stable power output. It is particularly suitable for high-power and high-frequency power conversion applications.
2. **Electric vehicles**: In the battery management system, drive circuit, and charging module of electric vehicles, the high current carrying capacity and low RDS(ON) of IRF2903ZS-VB can support the stable operation of the power system of electric vehicles while improving overall energy efficiency and system reliability.
3. **Motor drive**: In high-power motor drive systems, such as industrial motors and automation equipment, this MOSFET can effectively improve the response speed and power transmission efficiency of the motor. Its high current handling capability and low on-resistance help achieve efficient motor control and drive.
4. **High Power Amplifier**: In audio amplifiers, RF amplifiers, and other high power amplification applications, the IRF2903ZS-VB can reduce power loss and maintain efficient operation of the system, thereby improving the performance and stability of the equipment.
In short, the design and performance of the IRF2903ZS-VB make it very suitable for various electronic systems that require high current and high efficiency, and is an ideal choice for many high power applications.
The excellent performance of **IRF2903ZS-VB** enables it to perform well in multiple application areas:
1. **Power management**: In switching power supplies and DC-DC converters, the low on-resistance and high current handling capability of this MOSFET enable it to effectively reduce power loss, improve system efficiency, and ensure stable power output. It is particularly suitable for high-power and high-frequency power conversion applications.
2. **Electric vehicles**: In the battery management system, drive circuit, and charging module of electric vehicles, the high current carrying capacity and low RDS(ON) of IRF2903ZS-VB can support the stable operation of the power system of electric vehicles while improving overall energy efficiency and system reliability.
3. **Motor drive**: In high-power motor drive systems, such as industrial motors and automation equipment, this MOSFET can effectively improve the response speed and power transmission efficiency of the motor. Its high current handling capability and low on-resistance help achieve efficient motor control and drive.
4. **High Power Amplifier**: In audio amplifiers, RF amplifiers, and other high power amplification applications, the IRF2903ZS-VB can reduce power loss and maintain efficient operation of the system, thereby improving the performance and stability of the equipment.
In short, the design and performance of the IRF2903ZS-VB make it very suitable for various electronic systems that require high current and high efficiency, and is an ideal choice for many high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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