IRF2903ZSTRRP-VB Product details
Product introduction:
IRF2903ZSTRRP-VB is a high-performance N-Channel MOSFET in TO263 package. Using advanced Trench technology, this MOSFET provides ultra-low on-resistance and high current handling capability, and is particularly suitable for applications requiring high current and high efficiency. IRF2903ZSTRRP-VB performs well in power management and load switching applications, and can maintain stable performance under high current conditions, making it suitable for applications requiring high power and high efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 1.4mΩ @ VGS = 10V
- 1.6mΩ @ VGS = 4.5V
- **Maximum leakage current (ID)**: 260A
- **Technology**: Trench
Domain and module applications:
The low on-resistance and high current carrying capacity of the IRF2903ZSTRRP-VB enable it to excel in multiple fields, including:
1. **Power management**:
In power management systems, the IRF2903ZSTRRP-VB can be used as a switching element, playing an important role in switch mode power supplies (SMPS) and DC-DC converters (DC-DC converters). Its low on-resistance helps reduce energy loss, improve the overall efficiency of the power system, and ensure stable power output.
2. **Load switch**:
This MOSFET is particularly suitable for switching control of high current loads, such as motor drive systems and battery management systems (BMS). Its high current carrying capacity and low on-resistance enable it to provide efficient control under high load conditions while reducing energy loss, thereby improving system performance and reliability.
3. **Automotive electronics**:
In automotive electronic systems, the IRF2903ZSTRRP-VB can be used for switching control of battery management, electric vehicle (EV) power systems, and other high-power electrical devices. Its ability to handle high current loads ensures efficient operation and reliability of automotive electronic systems, especially where high power and high efficiency are required.
4. **Industrial control**:
The IRF2903ZSTRRP-VB is also widely used in industrial control systems for controlling high-power motors, heating elements, and other high-current devices. Its superior electrical performance and high current capability make it an ideal choice for industrial automation and electrical control systems, meeting the requirements of demanding industrial applications.
5. **Communication equipment**:
In communication equipment, the IRF2903ZSTRRP-VB can be used for power switches in power amplifiers and radio frequency (RF) modules. Its ultra-low on-resistance and high current handling capability help improve signal transmission efficiency and system stability, meeting the requirements of high-performance communication equipment.
IRF2903ZSTRRP-VB provides strong support for various high-current and high-efficiency applications with its superior electrical characteristics and wide application range, ensuring efficient and stable operation of the system.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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