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IRF2903ZSPBF-VB Product details
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IRF2903ZSPBF-VB Product Introduction
**IRF2903ZSPBF-VB** is a high-performance N-Channel MOSFET in TO263 package. It is designed based on Trench technology and has extremely low on-resistance and extremely high current handling capability. This MOSFET can operate stably at a maximum drain-to-source voltage (VDS) of 30V, and its ultra-low on-resistance (RDS(ON)) ensures minimal power loss, making it suitable for high-efficiency and high-load applications. The design of IRF2903ZSPBF-VB provides excellent performance and reliability in switching operations.
**IRF2903ZSPBF-VB** is a high-performance N-Channel MOSFET in TO263 package. It is designed based on Trench technology and has extremely low on-resistance and extremely high current handling capability. This MOSFET can operate stably at a maximum drain-to-source voltage (VDS) of 30V, and its ultra-low on-resistance (RDS(ON)) ensures minimal power loss, making it suitable for high-efficiency and high-load applications. The design of IRF2903ZSPBF-VB provides excellent performance and reliability in switching operations.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 260A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: IRF2903ZSPBF-VB
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Maximum drain to source voltage (VDS)**: 30V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 1.6mΩ (VGS = 4.5V)
- 1.4mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 260A
- **Technology**: Trench
- **Model**: IRF2903ZSPBF-VB
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Maximum drain to source voltage (VDS)**: 30V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 1.6mΩ (VGS = 4.5V)
- 1.4mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 260A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High-power power converters**
- In high-power power converters, the IRF2903ZSPBF-VB's extremely low RDS(ON) value and high current handling capability make it an ideal choice. It can maintain low power loss under high current loads, improving the efficiency and stability of DC-DC converters.
2. **Electric Vehicles (EV)**
- In the battery management system and motor drive system of electric vehicles, the high current handling capability and low on-resistance of the IRF2903ZSPBF-VB help optimize the control performance of the motor and the battery charge and discharge management, thereby improving the overall performance and endurance of the vehicle.
3. **Motor Drive**
- In motor drive applications, this MOSFET can effectively handle high current loads. Its low on-resistance ensures efficient motor control and is suitable for motor drive systems that require high-power switch control.
4. **Industrial Power Management**
- In industrial power management and automation equipment, the high current capability and low power consumption of the IRF2903ZSPBF-VB make it suitable for controlling high power loads, such as motor drives and heater controls, to improve equipment reliability and efficiency.
5. **High-Performance Computer Power**
- When used for high-performance computer power management, the IRF2903ZSPBF-VB can provide stable switching control, reduce power loss and improve power efficiency. Its ultra-low on-resistance ensures high efficiency and stability of the power supply under high load conditions.
The excellent performance of the IRF2903ZSPBF-VB enables it to perform well in various high-power and high-current applications, meeting the needs of modern electronic equipment for high performance, low power consumption and high reliability.
1. **High-power power converters**
- In high-power power converters, the IRF2903ZSPBF-VB's extremely low RDS(ON) value and high current handling capability make it an ideal choice. It can maintain low power loss under high current loads, improving the efficiency and stability of DC-DC converters.
2. **Electric Vehicles (EV)**
- In the battery management system and motor drive system of electric vehicles, the high current handling capability and low on-resistance of the IRF2903ZSPBF-VB help optimize the control performance of the motor and the battery charge and discharge management, thereby improving the overall performance and endurance of the vehicle.
3. **Motor Drive**
- In motor drive applications, this MOSFET can effectively handle high current loads. Its low on-resistance ensures efficient motor control and is suitable for motor drive systems that require high-power switch control.
4. **Industrial Power Management**
- In industrial power management and automation equipment, the high current capability and low power consumption of the IRF2903ZSPBF-VB make it suitable for controlling high power loads, such as motor drives and heater controls, to improve equipment reliability and efficiency.
5. **High-Performance Computer Power**
- When used for high-performance computer power management, the IRF2903ZSPBF-VB can provide stable switching control, reduce power loss and improve power efficiency. Its ultra-low on-resistance ensures high efficiency and stability of the power supply under high load conditions.
The excellent performance of the IRF2903ZSPBF-VB enables it to perform well in various high-power and high-current applications, meeting the needs of modern electronic equipment for high performance, low power consumption and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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