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IRF2903ZL-VB Product details
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Product Introduction
**IRF2903ZL-VB** is a high-performance N-Channel MOSFET in TO262 package, designed for high current and high efficiency applications. It uses Trench technology, with extremely low on-resistance and strong current handling capability. This MOSFET can withstand drain-source voltages up to 30V, and its on-resistance is as low as 2mΩ at a gate voltage of 10V, making it suitable for various application scenarios requiring high current and high efficiency.
**IRF2903ZL-VB** is a high-performance N-Channel MOSFET in TO262 package, designed for high current and high efficiency applications. It uses Trench technology, with extremely low on-resistance and strong current handling capability. This MOSFET can withstand drain-source voltages up to 30V, and its on-resistance is as low as 2mΩ at a gate voltage of 10V, making it suitable for various application scenarios requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Package**: TO262
- **Configuration**: Single N-Channel
- **Drain to Source Voltage (VDS)**: 30V
- **Gate to Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.24mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum Continuous Drain Current (ID)**: 150A
- **Technology**: Trench
- **Package**: TO262
- **Configuration**: Single N-Channel
- **Drain to Source Voltage (VDS)**: 30V
- **Gate to Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.24mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum Continuous Drain Current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management**: The low on-resistance and high current capability of the IRF2903ZL-VB make it ideal for use in efficient power management modules such as DC-DC converters and power conditioning systems. Its low RDS(ON) ensures reduced power loss and improved system efficiency, especially for applications that handle high current and high power.
2. **Electric Vehicles (EV)**: In the battery management system (BMS) and motor controllers of electric vehicles, the IRF2903ZL-VB provides excellent high current handling capability and low power consumption. Its low on-resistance and high current capability help improve the power control efficiency and system reliability of electric vehicles.
3. **Industrial Control**: This MOSFET has obvious advantages in industrial automation equipment, such as servo motor drives and high power switching applications. The high current capability and low on-resistance of the IRF2903ZL-VB enable stable operation under high load conditions, making it suitable for industrial control systems that require high performance and high reliability.
4. **Switching power supply**: In switching power supply design, especially in applications requiring high current and low power consumption, the low on-resistance and high current capability of IRF2903ZL-VB can significantly reduce switching losses and improve the overall efficiency and stability of the power supply. This makes it suitable for various switching power supply applications with high current and high switching frequency.
The superior performance of IRF2903ZL-VB enables it to perform well in high-power and high-efficiency applications, providing efficient and reliable solutions for various power management and switching systems.
1. **Power Management**: The low on-resistance and high current capability of the IRF2903ZL-VB make it ideal for use in efficient power management modules such as DC-DC converters and power conditioning systems. Its low RDS(ON) ensures reduced power loss and improved system efficiency, especially for applications that handle high current and high power.
2. **Electric Vehicles (EV)**: In the battery management system (BMS) and motor controllers of electric vehicles, the IRF2903ZL-VB provides excellent high current handling capability and low power consumption. Its low on-resistance and high current capability help improve the power control efficiency and system reliability of electric vehicles.
3. **Industrial Control**: This MOSFET has obvious advantages in industrial automation equipment, such as servo motor drives and high power switching applications. The high current capability and low on-resistance of the IRF2903ZL-VB enable stable operation under high load conditions, making it suitable for industrial control systems that require high performance and high reliability.
4. **Switching power supply**: In switching power supply design, especially in applications requiring high current and low power consumption, the low on-resistance and high current capability of IRF2903ZL-VB can significantly reduce switching losses and improve the overall efficiency and stability of the power supply. This makes it suitable for various switching power supply applications with high current and high switching frequency.
The superior performance of IRF2903ZL-VB enables it to perform well in high-power and high-efficiency applications, providing efficient and reliable solutions for various power management and switching systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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