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IRF2807ZSTRL-VB Product details
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# Product Introduction
IRF2807ZSTRL-VB is a high-performance N-Channel MOSFET in TO263 package, designed for high voltage and high current applications. It is manufactured using Trench technology, providing extremely low on-resistance and excellent current handling capability. The maximum drain-source voltage (V_DS) of this MOSFET is 80V, and the maximum gate-source voltage (V_GS) is ±20V. Its gate-source threshold voltage (V_th) is 3V, and the on-resistance is 10mΩ and 6mΩ at gate-source voltages of 4.5V and 10V, respectively. This makes the IRF2807ZSTRL-VB perform well in high current applications, with a maximum continuous current (I_D) of 120A, suitable for a variety of high voltage and high power electronic designs and power management modules.
IRF2807ZSTRL-VB is a high-performance N-Channel MOSFET in TO263 package, designed for high voltage and high current applications. It is manufactured using Trench technology, providing extremely low on-resistance and excellent current handling capability. The maximum drain-source voltage (V_DS) of this MOSFET is 80V, and the maximum gate-source voltage (V_GS) is ±20V. Its gate-source threshold voltage (V_th) is 3V, and the on-resistance is 10mΩ and 6mΩ at gate-source voltages of 4.5V and 10V, respectively. This makes the IRF2807ZSTRL-VB perform well in high current applications, with a maximum continuous current (I_D) of 120A, suitable for a variety of high voltage and high power electronic designs and power management modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage(V_DS)**: 80V
- **Maximum gate-source voltage(V_GS)**: ±20V
- **Gate-source threshold voltage(V_th)**: 3V
- **On-resistance(R_DS(on))**:
- 10mΩ @ V_GS = 4.5V
- 6mΩ @ V_GS = 10V
- **Maximum continuous current(I_D)**: 120A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage(V_DS)**: 80V
- **Maximum gate-source voltage(V_GS)**: ±20V
- **Gate-source threshold voltage(V_th)**: 3V
- **On-resistance(R_DS(on))**:
- 10mΩ @ V_GS = 4.5V
- 6mΩ @ V_GS = 10V
- **Maximum continuous current(I_D)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management**: The low on-resistance and high current handling capability of the IRF2807ZSTRL-VB make it ideal for efficient power management systems. It can be used in high-power DC-DC converters and power modules to improve system efficiency and reduce energy loss.
2. **Electric Vehicle**: In the battery management and power drive systems of electric vehicles, this MOSFET can be used as a switching element to control large currents and ensure system stability. Its high current capability and low on-resistance help improve the performance and endurance of electric vehicles.
3. **Industrial Automation**: In industrial automation systems, the IRF2807ZSTRL-VB can be used to control motors and high-power loads. Its high current capability and low on-resistance ensure efficient motor drive and reliable system operation.
4. **Power Amplifier**: In high-power audio systems, this MOSFET can be used as a switching element in the power amplifier. Its low on-resistance helps reduce power loss, improve sound quality and system stability.
5. **Switching Power Supply**: IRF2807ZSTRL-VB also performs well in switching power supply design. Its extremely low on-resistance helps reduce switching losses and improves the overall efficiency and performance of the switching power supply.
These application examples demonstrate the advantages of IRF2807ZSTRL-VB in high current and high voltage applications, making it an indispensable key component in many modern electronic devices and power systems.
1. **Power Management**: The low on-resistance and high current handling capability of the IRF2807ZSTRL-VB make it ideal for efficient power management systems. It can be used in high-power DC-DC converters and power modules to improve system efficiency and reduce energy loss.
2. **Electric Vehicle**: In the battery management and power drive systems of electric vehicles, this MOSFET can be used as a switching element to control large currents and ensure system stability. Its high current capability and low on-resistance help improve the performance and endurance of electric vehicles.
3. **Industrial Automation**: In industrial automation systems, the IRF2807ZSTRL-VB can be used to control motors and high-power loads. Its high current capability and low on-resistance ensure efficient motor drive and reliable system operation.
4. **Power Amplifier**: In high-power audio systems, this MOSFET can be used as a switching element in the power amplifier. Its low on-resistance helps reduce power loss, improve sound quality and system stability.
5. **Switching Power Supply**: IRF2807ZSTRL-VB also performs well in switching power supply design. Its extremely low on-resistance helps reduce switching losses and improves the overall efficiency and performance of the switching power supply.
These application examples demonstrate the advantages of IRF2807ZSTRL-VB in high current and high voltage applications, making it an indispensable key component in many modern electronic devices and power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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