中文
English
IRF2807ZSPBF-VB Product details
Back to previous pageProduct introduction：
Product Introduction
**IRF2807ZSPBF-VB** is a high-performance N-channel MOSFET in TO263 package. This MOSFET supports a maximum drain-source voltage (V_DS) of 80V and a drain current (I_D) of 120A, making it ideal for high voltage and high current applications. It has a low on-resistance (R_DS(ON)), which is 10mΩ at V_GS = 4.5V and 6mΩ at V_GS = 10V. This enables the IRF2807ZSPBF-VB to maintain low power loss under high current conditions and provide excellent switching performance. Designed with Trench technology, it is designed to provide reliable performance for a variety of high-efficiency power supplies and current management systems.
**IRF2807ZSPBF-VB** is a high-performance N-channel MOSFET in TO263 package. This MOSFET supports a maximum drain-source voltage (V_DS) of 80V and a drain current (I_D) of 120A, making it ideal for high voltage and high current applications. It has a low on-resistance (R_DS(ON)), which is 10mΩ at V_GS = 4.5V and 6mΩ at V_GS = 10V. This enables the IRF2807ZSPBF-VB to maintain low power loss under high current conditions and provide excellent switching performance. Designed with Trench technology, it is designed to provide reliable performance for a variety of high-efficiency power supplies and current management systems.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: IRF2807ZSPBF-VB
- **Package**: TO263
- **Configuration**: Single-stage N-channel
- **Drain-source voltage (V_DS)**: 80V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON)）**:
- 10mΩ @ V_GS = 4.5V
- 6mΩ @ V_GS = 10V
- **Drain current (I_D)**: 120A
- **Technology**: Trench
- **Model**: IRF2807ZSPBF-VB
- **Package**: TO263
- **Configuration**: Single-stage N-channel
- **Drain-source voltage (V_DS)**: 80V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON)）**:
- 10mΩ @ V_GS = 4.5V
- 6mΩ @ V_GS = 10V
- **Drain current (I_D)**: 120A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **High voltage power management**:
- The high drain-source voltage and low on-resistance of the IRF2807ZSPBF-VB make it ideal for high voltage power management systems. It can efficiently manage power conversion, provide stable current and low power loss, and ensure efficient operation of the system.
2. **Electric vehicles**:
- In the battery management and motor drive systems of electric vehicles, the high voltage and high current handling capabilities of this MOSFET can meet the high power requirements and support the reliable operation of electric vehicles under extreme conditions.
3. **Industrial power modules**:
- The IRF2807ZSPBF-VB is suitable for industrial power modules. Its high current capability and low on-resistance help improve system efficiency and power density, and adapt to the high load requirements of various industrial applications.
4. **DC-DC Converter**:
- In DC-DC converters, this MOSFET can handle high current and high voltage while maintaining low power consumption, suitable for efficient voltage conversion to meet application scenarios with different power requirements.
5. **High-power LED Driver**:
- Due to its low on-resistance and high current carrying capacity, IRF2807ZSPBF-VB is also suitable for high-power LED drive circuits, providing stable current control to ensure high efficiency and long life of LEDs.
1. **High voltage power management**:
- The high drain-source voltage and low on-resistance of the IRF2807ZSPBF-VB make it ideal for high voltage power management systems. It can efficiently manage power conversion, provide stable current and low power loss, and ensure efficient operation of the system.
2. **Electric vehicles**:
- In the battery management and motor drive systems of electric vehicles, the high voltage and high current handling capabilities of this MOSFET can meet the high power requirements and support the reliable operation of electric vehicles under extreme conditions.
3. **Industrial power modules**:
- The IRF2807ZSPBF-VB is suitable for industrial power modules. Its high current capability and low on-resistance help improve system efficiency and power density, and adapt to the high load requirements of various industrial applications.
4. **DC-DC Converter**:
- In DC-DC converters, this MOSFET can handle high current and high voltage while maintaining low power consumption, suitable for efficient voltage conversion to meet application scenarios with different power requirements.
5. **High-power LED Driver**:
- Due to its low on-resistance and high current carrying capacity, IRF2807ZSPBF-VB is also suitable for high-power LED drive circuits, providing stable current control to ensure high efficiency and long life of LEDs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
