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IRF2807L-VB Product details
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IRF2807L-VB Product Introduction
**IRF2807L-VB** is a high-performance N-Channel MOSFET in TO262 package. It is designed based on advanced Trench technology and has excellent current handling capability and low on-resistance. This MOSFET is suitable for operation at a maximum drain-to-source voltage (VDS) of 80V and can provide stable performance in high-current applications. Its low on-resistance (RDS(ON)) can effectively reduce power loss, improve system efficiency and thermal management performance.
**IRF2807L-VB** is a high-performance N-Channel MOSFET in TO262 package. It is designed based on advanced Trench technology and has excellent current handling capability and low on-resistance. This MOSFET is suitable for operation at a maximum drain-to-source voltage (VDS) of 80V and can provide stable performance in high-current applications. Its low on-resistance (RDS(ON)) can effectively reduce power loss, improve system efficiency and thermal management performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 80V | 3V | 85A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Model**: IRF2807L-VB
- **Package**: TO262
- **Configuration**: Single N-Channel
- **Maximum drain to source voltage (VDS)**: 80V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ (VGS = 4.5V)
- 6mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
- **Model**: IRF2807L-VB
- **Package**: TO262
- **Configuration**: Single N-Channel
- **Maximum drain to source voltage (VDS)**: 80V
- **Maximum gate to source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ (VGS = 4.5V)
- 6mΩ (VGS = 10V)
- **Maximum drain current (ID)**: 85A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
1. **High-power power converters**
- In high-power power converters, the low RDS(ON) value and high current handling capability of the IRF2807L-VB make it ideal for high-efficiency DC-DC converters. It can effectively reduce power loss, improve power conversion efficiency, and enhance system stability.
2. **Electric Vehicles (EV)**
- In the drive system and battery management system of electric vehicles, this MOSFET provides high current handling capability and low on-resistance, which can optimize the control performance of the motor and the charge and discharge management of the battery, improving the overall performance and efficiency of the vehicle.
3. **Motor Drive**
- In motor drive applications, the IRF2807L-VB can handle high current loads and is suitable for switching control of high-power motors. Its low RDS(ON) value ensures high efficiency and stability of the motor drive system.
4. **Industrial Power Management**
- In industrial automation equipment and power management systems, the IRF2807L-VB can efficiently control high-power loads such as motors and heaters. Its low on-resistance and high current capability ensure efficient operation and long life of the equipment.
5. **Consumer Electronics**
- When used for power management of consumer electronics, the low power consumption characteristics and high current capability of the IRF2807L-VB can improve the overall performance of the equipment, such as high-performance audio systems and computer power supplies, providing stable switching control and reducing power loss.
The high efficiency performance and low on-resistance of the IRF2807L-VB make it excel in a variety of high-power and high-current applications, meeting the high reliability and high efficiency requirements of modern electronic devices.
1. **High-power power converters**
- In high-power power converters, the low RDS(ON) value and high current handling capability of the IRF2807L-VB make it ideal for high-efficiency DC-DC converters. It can effectively reduce power loss, improve power conversion efficiency, and enhance system stability.
2. **Electric Vehicles (EV)**
- In the drive system and battery management system of electric vehicles, this MOSFET provides high current handling capability and low on-resistance, which can optimize the control performance of the motor and the charge and discharge management of the battery, improving the overall performance and efficiency of the vehicle.
3. **Motor Drive**
- In motor drive applications, the IRF2807L-VB can handle high current loads and is suitable for switching control of high-power motors. Its low RDS(ON) value ensures high efficiency and stability of the motor drive system.
4. **Industrial Power Management**
- In industrial automation equipment and power management systems, the IRF2807L-VB can efficiently control high-power loads such as motors and heaters. Its low on-resistance and high current capability ensure efficient operation and long life of the equipment.
5. **Consumer Electronics**
- When used for power management of consumer electronics, the low power consumption characteristics and high current capability of the IRF2807L-VB can improve the overall performance of the equipment, such as high-performance audio systems and computer power supplies, providing stable switching control and reducing power loss.
The high efficiency performance and low on-resistance of the IRF2807L-VB make it excel in a variety of high-power and high-current applications, meeting the high reliability and high efficiency requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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