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IRF2804STRR7PP-VB Product details
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# Product Introduction
IRF2804STRR7PP-VB is a high-performance dual N-Channel MOSFET in TO263-7L package, designed for high current and high efficiency applications. It uses advanced Trench technology to provide extremely low on-resistance and excellent current handling capability. The maximum drain-source voltage (V_DS) of this MOSFET is 40V, and the maximum gate-source voltage (V_GS) is ±20V. Its gate-source threshold voltage (V_th) is 3V, and at a gate-source voltage of 10V, the on-resistance (R_DS(on)) is only 0.9mΩ, ensuring extremely low power consumption and high efficiency performance. Its maximum continuous current (I_D) is 350A, making it an excellent performer in a variety of high current applications.
IRF2804STRR7PP-VB is a high-performance dual N-Channel MOSFET in TO263-7L package, designed for high current and high efficiency applications. It uses advanced Trench technology to provide extremely low on-resistance and excellent current handling capability. The maximum drain-source voltage (V_DS) of this MOSFET is 40V, and the maximum gate-source voltage (V_GS) is ±20V. Its gate-source threshold voltage (V_th) is 3V, and at a gate-source voltage of 10V, the on-resistance (R_DS(on)) is only 0.9mΩ, ensuring extremely low power consumption and high efficiency performance. Its maximum continuous current (I_D) is 350A, making it an excellent performer in a variety of high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | 0.9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
Detailed parameter description
- **Package type**: TO263-7L
- **Configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage(V_DS)**: 40V
- **Maximum gate-source voltage(V_GS)**: ±20V
- **Gate-source threshold voltage(V_th)**: 3V
- **On-resistance(R_DS(on))**:
- 0.9mΩ @ V_GS = 10V
- **Maximum continuous current(I_D)**: 350A
- **Technology**: Trench
- **Package type**: TO263-7L
- **Configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage(V_DS)**: 40V
- **Maximum gate-source voltage(V_GS)**: ±20V
- **Gate-source threshold voltage(V_th)**: 3V
- **On-resistance(R_DS(on))**:
- 0.9mΩ @ V_GS = 10V
- **Maximum continuous current(I_D)**: 350A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Conversion and Management**: The low on-resistance and high current handling capability of the IRF2804STRR7PP-VB make it ideal for efficient power conversion and management systems. It can be used in high-power DC-DC converters and power modules to optimize system efficiency and reduce power consumption.
2. **Electric Vehicle**: In the battery management system and power drive module of electric vehicles, this MOSFET can effectively control large currents to ensure system reliability and efficiency. Its high current capability and low on-resistance help improve the performance and endurance of electric vehicles.
3. **Industrial Drive System**: The IRF2804STRR7PP-VB is also suitable for high-power motor drive systems in industrial automation. Its high current handling capability and low on-resistance can ensure efficient control and stable operation of the motor, and is suitable for driving solenoid valves and relays.
4. **Power Amplifier**: In the design of power amplifiers, this MOSFET can be used as a high-current switching element. Its low on-resistance reduces power loss, improves the sound quality and stability of the system, and is particularly suitable for high-power audio equipment.
5. **Switching Power Supply**: The characteristics of IRF2804STRR7PP-VB also make it very suitable for use in switching power supply design. Its extremely low on-resistance can help reduce switching losses and improve the overall efficiency and performance of the switching power supply.
These application scenarios demonstrate the advantages of IRF2804STRR7PP-VB in applications with high current and high efficiency requirements, making it an important component in modern electronic devices and power systems.
1. **Power Conversion and Management**: The low on-resistance and high current handling capability of the IRF2804STRR7PP-VB make it ideal for efficient power conversion and management systems. It can be used in high-power DC-DC converters and power modules to optimize system efficiency and reduce power consumption.
2. **Electric Vehicle**: In the battery management system and power drive module of electric vehicles, this MOSFET can effectively control large currents to ensure system reliability and efficiency. Its high current capability and low on-resistance help improve the performance and endurance of electric vehicles.
3. **Industrial Drive System**: The IRF2804STRR7PP-VB is also suitable for high-power motor drive systems in industrial automation. Its high current handling capability and low on-resistance can ensure efficient control and stable operation of the motor, and is suitable for driving solenoid valves and relays.
4. **Power Amplifier**: In the design of power amplifiers, this MOSFET can be used as a high-current switching element. Its low on-resistance reduces power loss, improves the sound quality and stability of the system, and is particularly suitable for high-power audio equipment.
5. **Switching Power Supply**: The characteristics of IRF2804STRR7PP-VB also make it very suitable for use in switching power supply design. Its extremely low on-resistance can help reduce switching losses and improve the overall efficiency and performance of the switching power supply.
These application scenarios demonstrate the advantages of IRF2804STRR7PP-VB in applications with high current and high efficiency requirements, making it an important component in modern electronic devices and power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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