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IRF2804SPBF-VB Product details
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Product Introduction
**IRF2804SPBF-VB** is a high-performance N-channel MOSFET in TO263 package. With a drain-source voltage (V_DS) of up to 40V and a drain current (I_D) of 280A, this MOSFET is suitable for handling high current applications. Its on-resistance (R_DS(ON)) is very low at 1.68mΩ (at V_GS = 4.5V) and 1.4mΩ (at V_GS = 10V), providing excellent switching performance. The IRF2804SPBF-VB is designed with Trench technology to provide high efficiency and low power consumption, suitable for high-power power supplies and current management systems.
**IRF2804SPBF-VB** is a high-performance N-channel MOSFET in TO263 package. With a drain-source voltage (V_DS) of up to 40V and a drain current (I_D) of 280A, this MOSFET is suitable for handling high current applications. Its on-resistance (R_DS(ON)) is very low at 1.68mΩ (at V_GS = 4.5V) and 1.4mΩ (at V_GS = 10V), providing excellent switching performance. The IRF2804SPBF-VB is designed with Trench technology to provide high efficiency and low power consumption, suitable for high-power power supplies and current management systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | 1.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 280A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: IRF2804SPBF-VB
- **Package**: TO263
- **Configuration**: Single-stage N-channel
- **Drain-source voltage (V_DS)**: 40V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON)）**:
- 1.68mΩ @ V_GS = 4.5V
- 1.4mΩ @ V_GS = 10V
- **Drain current (I_D)**: 280A
- **Technology**: Trench
- **Model**: IRF2804SPBF-VB
- **Package**: TO263
- **Configuration**: Single-stage N-channel
- **Drain-source voltage (V_DS)**: 40V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(ON)）**:
- 1.68mΩ @ V_GS = 4.5V
- 1.4mΩ @ V_GS = 10V
- **Drain current (I_D)**: 280A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **High-power power management**:
- The high current handling capability and low on-resistance of the IRF2804SPBF-VB make it ideal for high-power power management systems. It can efficiently manage and convert large currents, reduce power consumption, and improve the efficiency and reliability of the power system.
2. **Electric vehicles**:
- In the motor drive and battery management system of electric vehicles, the high current carrying capacity and low power loss characteristics of this MOSFET enable it to handle high loads and support the stable operation of electric vehicles under high power requirements.
3. **Industrial power**:
- When used in industrial power modules, the high current and low on-resistance of the IRF2804SPBF-VB help improve the power density and efficiency of the system, and adapt to the high loads and harsh conditions in industrial environments.
4. **DC-DC Converter**:
- In DC-DC converters, this MOSFET is able to handle high currents while maintaining low power consumption, making it suitable for efficient voltage conversion to meet the power needs of a variety of applications.
5. **High Power LED Driver**:
- Due to its low on-resistance and high current handling capability, the IRF2804SPBF-VB is suitable for high power LED driver circuits, providing stable current control to ensure high efficiency and long life of the LED.
1. **High-power power management**:
- The high current handling capability and low on-resistance of the IRF2804SPBF-VB make it ideal for high-power power management systems. It can efficiently manage and convert large currents, reduce power consumption, and improve the efficiency and reliability of the power system.
2. **Electric vehicles**:
- In the motor drive and battery management system of electric vehicles, the high current carrying capacity and low power loss characteristics of this MOSFET enable it to handle high loads and support the stable operation of electric vehicles under high power requirements.
3. **Industrial power**:
- When used in industrial power modules, the high current and low on-resistance of the IRF2804SPBF-VB help improve the power density and efficiency of the system, and adapt to the high loads and harsh conditions in industrial environments.
4. **DC-DC Converter**:
- In DC-DC converters, this MOSFET is able to handle high currents while maintaining low power consumption, making it suitable for efficient voltage conversion to meet the power needs of a variety of applications.
5. **High Power LED Driver**:
- Due to its low on-resistance and high current handling capability, the IRF2804SPBF-VB is suitable for high power LED driver circuits, providing stable current control to ensure high efficiency and long life of the LED.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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