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IRF2804S-7PPBF-VB Product details
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Product Introduction
**IRF2804S-7PPBF-VB** is a high-performance dual N-Channel MOSFET in TO263-7L package. This MOSFET adopts Trench technology and is designed for high-current, high-efficiency applications. Its low RDS(ON) value and high current carrying capacity make it excellent in various power management and switching applications. With a drain-source voltage of 40V and a maximum drain current of 350A, the device is suitable for high-load power management and electric vehicle systems.
**IRF2804S-7PPBF-VB** is a high-performance dual N-Channel MOSFET in TO263-7L package. This MOSFET adopts Trench technology and is designed for high-current, high-efficiency applications. Its low RDS(ON) value and high current carrying capacity make it excellent in various power management and switching applications. With a drain-source voltage of 40V and a maximum drain current of 350A, the device is suitable for high-load power management and electric vehicle systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | 0.9mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 40V | 3V | 350A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
Detailed parameter description
- **Model**: IRF2804S-7PPBF-VB
- **Package**: TO263-7L
- **Configuration**: Dual N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 0.9mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 350A
- **Technology**: Trench
- **Model**: IRF2804S-7PPBF-VB
- **Package**: TO263-7L
- **Configuration**: Dual N-Channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 0.9mΩ @ VGS = 10V
- **Maximum leakage current (ID)**: 350A
- **Technology**: Trench
Domain and module applications：
Applications and Modules
The high performance characteristics of the **IRF2804S-7PPBF-VB** make it suitable for several key application areas:
1. **Power Management**: Due to its extremely low RDS(ON) and high current capability, this MOSFET is commonly used in switching power supplies and DC-DC converters, which can effectively reduce power losses, improve system efficiency, and reduce heat generation.
2. **Electric Vehicle**: In the battery management system and drive circuit of electric vehicles, the high current carrying capacity of this MOSFET can ensure the stable operation of the electric vehicle's power system while improving overall efficiency and reliability.
3. **Motor Drive**: In high-power motor drive systems, such as industrial motors or automation equipment, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice, helping to improve the motor's response speed and power transmission efficiency.
4. **High Power Application**: In high power audio amplifiers and RF amplifiers, IRF2804S-7PPBF-VB can provide stable performance, reduce power loss, and maintain efficient operation of the system.
In short, the design of IRF2804S-7PPBF-VB makes it excel in applications with high current and high efficiency requirements, and is an ideal choice for various high power electronic systems.
The high performance characteristics of the **IRF2804S-7PPBF-VB** make it suitable for several key application areas:
1. **Power Management**: Due to its extremely low RDS(ON) and high current capability, this MOSFET is commonly used in switching power supplies and DC-DC converters, which can effectively reduce power losses, improve system efficiency, and reduce heat generation.
2. **Electric Vehicle**: In the battery management system and drive circuit of electric vehicles, the high current carrying capacity of this MOSFET can ensure the stable operation of the electric vehicle's power system while improving overall efficiency and reliability.
3. **Motor Drive**: In high-power motor drive systems, such as industrial motors or automation equipment, the high current handling capability and low on-resistance of this MOSFET make it an ideal choice, helping to improve the motor's response speed and power transmission efficiency.
4. **High Power Application**: In high power audio amplifiers and RF amplifiers, IRF2804S-7PPBF-VB can provide stable performance, reduce power loss, and maintain efficient operation of the system.
In short, the design of IRF2804S-7PPBF-VB makes it excel in applications with high current and high efficiency requirements, and is an ideal choice for various high power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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