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IRF1503S-VB Product details
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Product Introduction
**IRF1503S-VB** is a high-performance unipolar N-channel MOSFET in TO263 package using Trench technology. This MOSFET has extremely low on-resistance and high current handling capability, making it particularly suitable for efficient power management and high-power applications. The maximum drain-source voltage of IRF1503S-VB is 30V, and the maximum drain current reaches 150A. Its low on-resistance ensures low power consumption and high efficiency under high current operation. The low threshold voltage of this MOSFET (Vth = 1.7V) enables it to achieve efficient conduction at lower gate-source voltages, further improving its performance in various applications.
**IRF1503S-VB** is a high-performance unipolar N-channel MOSFET in TO263 package using Trench technology. This MOSFET has extremely low on-resistance and high current handling capability, making it particularly suitable for efficient power management and high-power applications. The maximum drain-source voltage of IRF1503S-VB is 30V, and the maximum drain current reaches 150A. Its low on-resistance ensures low power consumption and high efficiency under high current operation. The low threshold voltage of this MOSFET (Vth = 1.7V) enables it to achieve efficient conduction at lower gate-source voltages, further improving its performance in various applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 3.2mΩ @ VGS=4.5V
- 2.3mΩ @ VGS=10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
The **IRF1503S-VB** MOSFET is suitable for the following fields and modules:
1. **Power converter**: In high-efficiency DC-DC converters, the low on-resistance and high current capability of the IRF1503S-VB enable it to effectively handle large current loads, reduce energy losses, and improve conversion efficiency. This makes it ideal for use in power management modules, switching power supplies, and power distribution systems.
2. **Power tools and motor drives**: Due to its high current carrying capability and low on-resistance, the IRF1503S-VB excels in power tool and motor drive applications. It can provide stable switching operation in the motor drive circuit of the power tool, ensuring efficient operation of the equipment.
3. **High-power LED drive**: In high-power LED lighting systems, this MOSFET is able to effectively manage large currents and provide stable LED drive current. Its low on-resistance helps reduce power consumption and heat generation, thereby improving the efficiency and reliability of the overall lighting system.
4. **Electric Vehicles and Energy Storage Systems**: In electric vehicles and energy storage systems, the IRF1503S-VB can be used as a switching component in the battery management system to handle high currents and ensure system stability and safety. Its high current capability and excellent switching performance make it very suitable for these high-load application scenarios.
In short, the IRF1503S-VB MOSFET performs well in a variety of high-current and high-efficiency applications, meeting the high performance and power efficiency requirements of modern electronic devices.
The **IRF1503S-VB** MOSFET is suitable for the following fields and modules:
1. **Power converter**: In high-efficiency DC-DC converters, the low on-resistance and high current capability of the IRF1503S-VB enable it to effectively handle large current loads, reduce energy losses, and improve conversion efficiency. This makes it ideal for use in power management modules, switching power supplies, and power distribution systems.
2. **Power tools and motor drives**: Due to its high current carrying capability and low on-resistance, the IRF1503S-VB excels in power tool and motor drive applications. It can provide stable switching operation in the motor drive circuit of the power tool, ensuring efficient operation of the equipment.
3. **High-power LED drive**: In high-power LED lighting systems, this MOSFET is able to effectively manage large currents and provide stable LED drive current. Its low on-resistance helps reduce power consumption and heat generation, thereby improving the efficiency and reliability of the overall lighting system.
4. **Electric Vehicles and Energy Storage Systems**: In electric vehicles and energy storage systems, the IRF1503S-VB can be used as a switching component in the battery management system to handle high currents and ensure system stability and safety. Its high current capability and excellent switching performance make it very suitable for these high-load application scenarios.
In short, the IRF1503S-VB MOSFET performs well in a variety of high-current and high-efficiency applications, meeting the high performance and power efficiency requirements of modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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