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IRF1407S-VB Product details
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Product Introduction
**IRF1407S-VB** is a high-performance N-Channel MOSFET in TO263 package, designed for high current and high efficiency applications. It uses Trench technology and has excellent on-resistance and high current handling capability. This MOSFET can withstand drain-to-source voltages up to 80V, making it suitable for a variety of applications requiring higher voltage and current. Its low on-resistance and high current capability make it an excellent performer in high-efficiency power conversion and power management applications.
**IRF1407S-VB** is a high-performance N-Channel MOSFET in TO263 package, designed for high current and high efficiency applications. It uses Trench technology and has excellent on-resistance and high current handling capability. This MOSFET can withstand drain-to-source voltages up to 80V, making it suitable for a variety of applications requiring higher voltage and current. Its low on-resistance and high current capability make it an excellent performer in high-efficiency power conversion and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain to Source Voltage (VDS)**: 80V
- **Gate to Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum Continuous Drain Current (ID)**: 120A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain to Source Voltage (VDS)**: 80V
- **Gate to Source Voltage (VGS)**: ±20V
- **Gate Threshold Voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ @ VGS = 4.5V
- 6mΩ @ VGS = 10V
- **Maximum Continuous Drain Current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management**: The IRF1407S-VB is ideal for power management systems such as DC-DC converters and high-efficiency power supply modules due to its low on-resistance and high current handling capability. Its low RDS(ON) can effectively reduce power losses and improve the overall system's energy efficiency and stability.
2. **Electric Vehicles (EV)**: In the battery management system (BMS) and motor drive controllers of electric vehicles, the IRF1407S-VB's high current capability and low on-resistance make it ideal for high-load switching. Its ability to handle high currents ensures efficient operation and reliability of the system.
3. **Industrial Control**: This MOSFET has significant advantages in industrial automation equipment, such as servo motor drives and high-power switching applications. Its high current handling capability and low on-resistance make it stable under high-load conditions, making it suitable for use in demanding industrial control systems.
4. **Switching Power Supply**: In switching power supply design, especially in applications requiring high current and high switching frequency, the low on-resistance and high current capability of the IRF1407S-VB can reduce switching losses and improve the overall efficiency and stability of the power supply.
With its superior electrical performance and reliability, the IRF1407S-VB provides an excellent solution in high current and high efficiency applications, and is an ideal choice for high-performance switching and power management systems.
1. **Power Management**: The IRF1407S-VB is ideal for power management systems such as DC-DC converters and high-efficiency power supply modules due to its low on-resistance and high current handling capability. Its low RDS(ON) can effectively reduce power losses and improve the overall system's energy efficiency and stability.
2. **Electric Vehicles (EV)**: In the battery management system (BMS) and motor drive controllers of electric vehicles, the IRF1407S-VB's high current capability and low on-resistance make it ideal for high-load switching. Its ability to handle high currents ensures efficient operation and reliability of the system.
3. **Industrial Control**: This MOSFET has significant advantages in industrial automation equipment, such as servo motor drives and high-power switching applications. Its high current handling capability and low on-resistance make it stable under high-load conditions, making it suitable for use in demanding industrial control systems.
4. **Switching Power Supply**: In switching power supply design, especially in applications requiring high current and high switching frequency, the low on-resistance and high current capability of the IRF1407S-VB can reduce switching losses and improve the overall efficiency and stability of the power supply.
With its superior electrical performance and reliability, the IRF1407S-VB provides an excellent solution in high current and high efficiency applications, and is an ideal choice for high-performance switching and power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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