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IRF1405ZS-7PPBF-VB Product details

Product introduction:

# Product Introduction

IRF1405ZS-7PPBF-VB is a high-performance dual N-Channel MOSFET in TO263-7L package, designed for applications requiring high current and high efficiency. It is manufactured using advanced Trench technology and has very low on-resistance and excellent current carrying capacity. With a maximum drain-source voltage (V_DS) of 60V and a maximum gate-source voltage (V_GS) of ±20V, this MOSFET is suitable for a variety of high-current application scenarios. At a gate-source voltage of 10V, its on-resistance (R_DS(on)) is 2mΩ, ensuring extremely low power consumption and high efficiency. Its maximum continuous current (I_D) is 150A, enabling it to handle large amounts of current and is widely used in power conversion and power management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263-7L Dual-N+N 60V 3V 150A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263-7L Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263-7L Dual-N+N 60V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263-7L Dual-N+N 60V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263-7L Dual-N+N
Detailed parameter description

- **Package type**: TO263-7L
- **Configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (V_DS)**: 60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Gate-source threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(on))**:
- 2mΩ @ V_GS = 10V
- **Maximum continuous current (I_D)**: 150A
- **Technology**: Trench

Domain and module applications:

Applications and Module Examples

1. **Power Management and Conversion**: The low on-resistance and high current handling capability of the IRF1405ZS-7PPBF-VB make it excellent in power management and conversion applications. It can be used in DC-DC converters and power modules to help improve efficiency and reduce power consumption.

2. **Electric Vehicles**: In the battery management system of electric vehicles, this MOSFET can be used as a battery protection switch or power converter. Its high current capability and low on-resistance help improve the performance and endurance of electric vehicles while reducing heat loss.

3. **Power Amplifier**: The IRF1405ZS-7PPBF-VB is also very suitable for application in high-power audio systems. It can be used as the output stage of a power amplifier, which can effectively reduce power loss when handling large currents, thereby improving sound quality and system stability.

4. **Industrial Automation**: In the field of industrial automation, especially in motor drive modules, this MOSFET can be used to control high-power motors. Due to its high current capability and low on-resistance, it ensures efficient motor control and stable system operation.

5. **Switching Power Supply**: In switching power supply design, the low on-resistance characteristics of the IRF1405ZS-7PPBF-VB help reduce power losses, making it an ideal choice for high-efficiency switching power supplies.

These application examples demonstrate the wide applicability of the IRF1405ZS-7PPBF-VB in high current and high efficiency applications, making it a key component in modern electronic devices and power systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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