IRF1405ZS-7PPBF-VB Product details
Product introduction:
IRF1405ZS-7PPBF-VB is a high-performance dual N-Channel MOSFET in TO263-7L package, designed for applications requiring high current and high efficiency. It is manufactured using advanced Trench technology and has very low on-resistance and excellent current carrying capacity. With a maximum drain-source voltage (V_DS) of 60V and a maximum gate-source voltage (V_GS) of ±20V, this MOSFET is suitable for a variety of high-current application scenarios. At a gate-source voltage of 10V, its on-resistance (R_DS(on)) is 2mΩ, ensuring extremely low power consumption and high efficiency. Its maximum continuous current (I_D) is 150A, enabling it to handle large amounts of current and is widely used in power conversion and power management.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263-7L | Dual-N+N |
- **Package type**: TO263-7L
- **Configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (V_DS)**: 60V
- **Maximum gate-source voltage (V_GS)**: ±20V
- **Gate-source threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(on))**:
- 2mΩ @ V_GS = 10V
- **Maximum continuous current (I_D)**: 150A
- **Technology**: Trench
Domain and module applications:
1. **Power Management and Conversion**: The low on-resistance and high current handling capability of the IRF1405ZS-7PPBF-VB make it excellent in power management and conversion applications. It can be used in DC-DC converters and power modules to help improve efficiency and reduce power consumption.
2. **Electric Vehicles**: In the battery management system of electric vehicles, this MOSFET can be used as a battery protection switch or power converter. Its high current capability and low on-resistance help improve the performance and endurance of electric vehicles while reducing heat loss.
3. **Power Amplifier**: The IRF1405ZS-7PPBF-VB is also very suitable for application in high-power audio systems. It can be used as the output stage of a power amplifier, which can effectively reduce power loss when handling large currents, thereby improving sound quality and system stability.
4. **Industrial Automation**: In the field of industrial automation, especially in motor drive modules, this MOSFET can be used to control high-power motors. Due to its high current capability and low on-resistance, it ensures efficient motor control and stable system operation.
5. **Switching Power Supply**: In switching power supply design, the low on-resistance characteristics of the IRF1405ZS-7PPBF-VB help reduce power losses, making it an ideal choice for high-efficiency switching power supplies.
These application examples demonstrate the wide applicability of the IRF1405ZS-7PPBF-VB in high current and high efficiency applications, making it a key component in modern electronic devices and power systems.
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