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IRF1405LPBF-VB Product details
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Product Introduction
**IRF1405LPBF-VB** is a high-performance unipolar N-channel MOSFET in TO262 package with excellent electrical characteristics and high current handling capability. This MOSFET adopts Trench technology and is designed for high-efficiency switching and amplification applications. Its maximum drain-source voltage is 60V, and it can operate stably in a high-voltage environment. Its low on-resistance RDS(ON) is 2.8mΩ@VGS=10V, which makes it have extremely low power consumption and heat generation in high-current applications. It is suitable for power management and switching applications that require high current and high efficiency.
**IRF1405LPBF-VB** is a high-performance unipolar N-channel MOSFET in TO262 package with excellent electrical characteristics and high current handling capability. This MOSFET adopts Trench technology and is designed for high-efficiency switching and amplification applications. Its maximum drain-source voltage is 60V, and it can operate stably in a high-voltage environment. Its low on-resistance RDS(ON) is 2.8mΩ@VGS=10V, which makes it have extremely low power consumption and heat generation in high-current applications. It is suitable for power management and switching applications that require high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 2.8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Model**: IRF1405LPBF-VB
- **Package**: TO262
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2.8mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
- **Model**: IRF1405LPBF-VB
- **Package**: TO262
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 2.8mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples
1. **Power management**
- **Field**: Computer power supply, server power supply, UPS system.
- **Description**: The high current handling capability and low on-resistance of IRF1405LPBF-VB make it very suitable for use in power management modules, which can effectively reduce energy loss and improve system efficiency. For example, in a computer power supply, this MOSFET can be used for the main power switch to reduce power loss and improve stability.
2. **Electric vehicle**
- **Field**: Electric vehicle power supply system, charger.
- **Description**: In electric vehicles, IRF1405LPBF-VB can be used in high-power motor drive circuits and battery management systems. Its high current capacity and low on-resistance ensure stable operation under the high power requirements of electric vehicles, improving the overall performance of the vehicle.
3. **Motor control**
- **Field**: Industrial motor control, robot drive system.
- **Description**: In industrial motor control systems, this MOSFET can be used as a switching element for motor drive. Its high current handling capability can meet the driving requirements of high-power motors while reducing power consumption and improving system efficiency and reliability.
4. **High-efficiency switching circuits**
- **Field**: Switching power supplies, DC-DC converters.
- **Description**: The low on-resistance and high current handling capability of the IRF1405LPBF-VB make it suitable as a switching element in high-efficiency switching circuits. It can be used in DC-DC converters to provide efficient power conversion and reduce energy loss.
1. **Power management**
- **Field**: Computer power supply, server power supply, UPS system.
- **Description**: The high current handling capability and low on-resistance of IRF1405LPBF-VB make it very suitable for use in power management modules, which can effectively reduce energy loss and improve system efficiency. For example, in a computer power supply, this MOSFET can be used for the main power switch to reduce power loss and improve stability.
2. **Electric vehicle**
- **Field**: Electric vehicle power supply system, charger.
- **Description**: In electric vehicles, IRF1405LPBF-VB can be used in high-power motor drive circuits and battery management systems. Its high current capacity and low on-resistance ensure stable operation under the high power requirements of electric vehicles, improving the overall performance of the vehicle.
3. **Motor control**
- **Field**: Industrial motor control, robot drive system.
- **Description**: In industrial motor control systems, this MOSFET can be used as a switching element for motor drive. Its high current handling capability can meet the driving requirements of high-power motors while reducing power consumption and improving system efficiency and reliability.
4. **High-efficiency switching circuits**
- **Field**: Switching power supplies, DC-DC converters.
- **Description**: The low on-resistance and high current handling capability of the IRF1405LPBF-VB make it suitable as a switching element in high-efficiency switching circuits. It can be used in DC-DC converters to provide efficient power conversion and reduce energy loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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