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IRF1404ZSTRL-VB Product details
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# Product Introduction
The IRF1404ZSTRL-VB is a high-performance N-Channel MOSFET in a TO263 package, suitable for high current and high efficiency applications. It is manufactured using Trench technology and has excellent conduction characteristics and low on-resistance. Its maximum drain-source voltage (V_DS) is 40V, suitable for electronic designs and power conversion modules that require high current handling. The MOSFET has an on-resistance (R_DS(on)) of 2.5mΩ at a gate-source voltage (V_GS) of 4.5V and 2mΩ at 10V, making it an excellent performer in high current applications with a maximum continuous current (I_D) of 150A.
The IRF1404ZSTRL-VB is a high-performance N-Channel MOSFET in a TO263 package, suitable for high current and high efficiency applications. It is manufactured using Trench technology and has excellent conduction characteristics and low on-resistance. Its maximum drain-source voltage (V_DS) is 40V, suitable for electronic designs and power conversion modules that require high current handling. The MOSFET has an on-resistance (R_DS(on)) of 2.5mΩ at a gate-source voltage (V_GS) of 4.5V and 2mΩ at 10V, making it an excellent performer in high current applications with a maximum continuous current (I_D) of 150A.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage(V_DS)**: 40V
- **Maximum gate-source voltage(V_GS)**: ±20V
- **Gate-source threshold voltage(V_th)**: 3V
- **On-resistance(R_DS(on))**:
- 2.5mΩ @ V_GS = 4.5V
- 2mΩ @ V_GS = 10V
- **Maximum continuous current(I_D)**: 150A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage(V_DS)**: 40V
- **Maximum gate-source voltage(V_GS)**: ±20V
- **Gate-source threshold voltage(V_th)**: 3V
- **On-resistance(R_DS(on))**:
- 2.5mΩ @ V_GS = 4.5V
- 2mΩ @ V_GS = 10V
- **Maximum continuous current(I_D)**: 150A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management**: The low on-resistance and high current handling capability of the IRF1404ZSTRL-VB make it ideal for use in efficient power management systems. It can be used in DC-DC converters and power modules to improve energy efficiency and reduce heat loss.
2. **Electric Vehicle**: In the battery management system of electric vehicles, this MOSFET can be used as a battery protection switch or power converter. Its high current capability and low on-resistance help improve the performance and endurance of electric vehicles.
3. **Power Amplifier**: In high-power audio systems, the IRF1404ZSTRL-VB can be used in the output stage of the power amplifier to ensure that the system can handle high currents without generating excessive heat, thereby improving sound quality and system stability.
4. **Industrial Drive System**: This MOSFET is also suitable for motor drive modules in industrial automation. Due to its high current capability and low on-resistance, it can effectively control the switching of high-power motors to ensure efficient operation of the system.
5. **Switching Power Supply**: In switching power supply design, the low on-resistance of IRF1404ZSTRL-VB helps reduce power loss, making it an ideal choice for high-efficiency switching power supplies.
These application scenarios demonstrate the advantages of IRF1404ZSTRL-VB in high current and high efficiency situations, making it an indispensable component in many modern electronic devices.
1. **Power Management**: The low on-resistance and high current handling capability of the IRF1404ZSTRL-VB make it ideal for use in efficient power management systems. It can be used in DC-DC converters and power modules to improve energy efficiency and reduce heat loss.
2. **Electric Vehicle**: In the battery management system of electric vehicles, this MOSFET can be used as a battery protection switch or power converter. Its high current capability and low on-resistance help improve the performance and endurance of electric vehicles.
3. **Power Amplifier**: In high-power audio systems, the IRF1404ZSTRL-VB can be used in the output stage of the power amplifier to ensure that the system can handle high currents without generating excessive heat, thereby improving sound quality and system stability.
4. **Industrial Drive System**: This MOSFET is also suitable for motor drive modules in industrial automation. Due to its high current capability and low on-resistance, it can effectively control the switching of high-power motors to ensure efficient operation of the system.
5. **Switching Power Supply**: In switching power supply design, the low on-resistance of IRF1404ZSTRL-VB helps reduce power loss, making it an ideal choice for high-efficiency switching power supplies.
These application scenarios demonstrate the advantages of IRF1404ZSTRL-VB in high current and high efficiency situations, making it an indispensable component in many modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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