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IRF1404ZL-VB Product details
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1. IRF1404ZL-VB Product Introduction
IRF1404ZL-VB is a high-performance N-channel MOSFET packaged in TO262. It can withstand a drain-source voltage (VDS) of up to 40V and a gate-source voltage (VGS) of ±20V. This MOSFET is manufactured using advanced trench technology, has an extremely low on-resistance (RDS(ON) of 5mΩ@VGS=10V), and can handle a drain current (ID) of up to 100A. Designed for high-efficiency power management and switching applications, the IRF1404ZL-VB provides excellent current transfer capability and low-power operation, making it suitable for a variety of environments with high loads and high performance requirements.
IRF1404ZL-VB is a high-performance N-channel MOSFET packaged in TO262. It can withstand a drain-source voltage (VDS) of up to 40V and a gate-source voltage (VGS) of ±20V. This MOSFET is manufactured using advanced trench technology, has an extremely low on-resistance (RDS(ON) of 5mΩ@VGS=10V), and can handle a drain current (ID) of up to 100A. Designed for high-efficiency power management and switching applications, the IRF1404ZL-VB provides excellent current transfer capability and low-power operation, making it suitable for a variety of environments with high loads and high performance requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
II. IRF1404ZL-VB Parameter Description
- **Package**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Package**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
III. Application Fields and Modules
1. **Power Management and DC-DC Converters**: IRF1404ZL-VB performs well in power management systems, especially high-power DC-DC converters and power switching applications. Its low on-resistance can significantly reduce power consumption and improve power conversion efficiency, suitable for design scenarios that require high efficiency and low heat.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In electric vehicles and hybrid electric vehicles, this MOSFET is suitable for motor drive systems and battery management systems. Its high current handling capability and low on-resistance can effectively control the high power requirements of electric vehicles, thereby improving overall performance and reliability.
3. **Industrial Automation and Motor Control**: IRF1404ZL-VB is an ideal choice for high-power motor drive and load control applications in industrial automation. Its high current carrying capacity and excellent switching performance enable it to operate stably under heavy loads and high-frequency switching environments, improving equipment efficiency and durability.
4. **Communication Equipment and Data Center**: In communication equipment and data centers, this MOSFET can be used in high-power RF amplifiers and power management modules. Its low on-resistance and high current capability help optimize the signal quality and overall performance of the equipment, ensuring efficient and stable operation of the system.
With its excellent current handling capability and low power consumption characteristics, the IRF1404ZL-VB is suitable for a variety of high-power and high-efficiency applications, providing a reliable switching solution.
1. **Power Management and DC-DC Converters**: IRF1404ZL-VB performs well in power management systems, especially high-power DC-DC converters and power switching applications. Its low on-resistance can significantly reduce power consumption and improve power conversion efficiency, suitable for design scenarios that require high efficiency and low heat.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In electric vehicles and hybrid electric vehicles, this MOSFET is suitable for motor drive systems and battery management systems. Its high current handling capability and low on-resistance can effectively control the high power requirements of electric vehicles, thereby improving overall performance and reliability.
3. **Industrial Automation and Motor Control**: IRF1404ZL-VB is an ideal choice for high-power motor drive and load control applications in industrial automation. Its high current carrying capacity and excellent switching performance enable it to operate stably under heavy loads and high-frequency switching environments, improving equipment efficiency and durability.
4. **Communication Equipment and Data Center**: In communication equipment and data centers, this MOSFET can be used in high-power RF amplifiers and power management modules. Its low on-resistance and high current capability help optimize the signal quality and overall performance of the equipment, ensuring efficient and stable operation of the system.
With its excellent current handling capability and low power consumption characteristics, the IRF1404ZL-VB is suitable for a variety of high-power and high-efficiency applications, providing a reliable switching solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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