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IRF1404S-VB Product details

Product introduction:

IRF1404S-VB Product Introduction
The IRF1404S-VB is a high-performance N-channel MOSFET in a TO263 package, designed for high current and high-efficiency applications. With a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for a variety of power management and power switching applications. Its advanced Trench technology provides extremely low on-resistance (RDS(ON)), 2.5mΩ at a gate drive of 4.5V and 2mΩ at a gate drive of 10V, supporting drain currents up to 150A. The high current capability and low power consumption characteristics of the IRF1404S-VB enable it to excel in high-power, high-efficiency applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 40V 3V 150A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
IRF1404S-VB Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS=4.5V
- 2mΩ @ VGS=10V
- **Drain current (ID)**: 150A
- **Technology**: Trench
- **Maximum power dissipation**: Depends on heat dissipation conditions and actual design
- **Operating temperature range**: Typically -55°C to +150°C (specific data please refer to the data sheet)

Domain and module applications:

Application fields and module examples
1. **High-efficiency power converters**
The IRF1404S-VB is particularly suitable for high-efficiency power converters such as DC-DC converters and power management modules due to its extremely low RDS(ON) and high current capability. Low on-resistance can effectively reduce power loss and improve the overall efficiency of the system, making it an excellent performer in power supply designs that require high energy efficiency.

2. **Electric vehicle (EV) drive system**
In the motor drive and battery management system of electric vehicles, the high current handling capability and low on-resistance of the IRF1404S-VB enable it to meet high power requirements. It can provide stable switching performance under high current conditions, improving the overall efficiency and reliability of the electric vehicle system.

3. **Industrial power switch**
The IRF1404S-VB is very suitable for power switches in industrial applications, such as high-power load switches and inverters. Its low on-resistance and high current carrying capacity ensure reliability and efficiency under high power and high load conditions.

4. **Server and Data Center Power**
In data center and server power management, the low power consumption and high current handling capability of IRF1404S-VB make it an ideal choice. It can effectively reduce power consumption and improve the efficiency of power modules, suitable for high-density computing and data processing environments.

Overall, IRF1404S-VB is suitable for a variety of application scenarios requiring high current and high efficiency due to its excellent current handling capability and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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