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IRF1404SPBF-VB Product details
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1. IRF1404SPBF-VB Product Introduction
IRF1404SPBF-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. The drain-source voltage (VDS) of this MOSFET is 40V, the gate-source voltage (VGS) is up to ±20V, and the threshold voltage (Vth) is 3V. Its on-resistance (RDS(ON)) performs well at different gate voltages: 2.5mΩ @ VGS = 4.5V and 2mΩ @ VGS = 10V. With its maximum drain current of 150A and Trench technology, the IRF1404SPBF-VB is able to provide low-power, high-efficiency switching performance under high current conditions, suitable for a variety of high-load applications.
IRF1404SPBF-VB is a high-performance N-channel MOSFET in TO263 package, designed for high current and high efficiency applications. The drain-source voltage (VDS) of this MOSFET is 40V, the gate-source voltage (VGS) is up to ±20V, and the threshold voltage (Vth) is 3V. Its on-resistance (RDS(ON)) performs well at different gate voltages: 2.5mΩ @ VGS = 4.5V and 2mΩ @ VGS = 10V. With its maximum drain current of 150A and Trench technology, the IRF1404SPBF-VB is able to provide low-power, high-efficiency switching performance under high current conditions, suitable for a variety of high-load applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. IRF1404SPBF-VB Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology type**: Trench technology
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 2.5mΩ @ VGS = 4.5V
- 2mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology type**: Trench technology
Domain and module applications：
III. Application fields and modules of IRF1404SPBF-VB
The high performance characteristics of IRF1404SPBF-VB make it suitable for multiple fields and modules:
1. **High-efficiency switching power supply**: Due to its extremely low on-resistance and high current handling capability, IRF1404SPBF-VB is very suitable for high-efficiency switching power supply systems such as DC-DC converters and AC-DC converters. Its efficient switching characteristics can significantly reduce switching losses and improve power efficiency.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In electric vehicle and hybrid vehicle systems, IRF1404SPBF-VB can be used for motor drive, battery management and charging systems. Its high current capability and low on-resistance help improve the overall performance of the electric drive system and the efficiency of battery management.
3. **Power Inverter**: This MOSFET is suitable for solar photovoltaic systems and other power inverter equipment. Its high current handling capability and low conduction loss can effectively manage and convert power, ensuring efficient operation of the inverter system.
4. **Industrial Control and Load Switch**: The IRF1404SPBF-VB can be used in high-power load switches and industrial control systems. Its high current handling capability and low power consumption make it an ideal choice for controlling and protecting high-power loads, such as power distribution and motor control modules.
The high performance characteristics of IRF1404SPBF-VB make it suitable for multiple fields and modules:
1. **High-efficiency switching power supply**: Due to its extremely low on-resistance and high current handling capability, IRF1404SPBF-VB is very suitable for high-efficiency switching power supply systems such as DC-DC converters and AC-DC converters. Its efficient switching characteristics can significantly reduce switching losses and improve power efficiency.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In electric vehicle and hybrid vehicle systems, IRF1404SPBF-VB can be used for motor drive, battery management and charging systems. Its high current capability and low on-resistance help improve the overall performance of the electric drive system and the efficiency of battery management.
3. **Power Inverter**: This MOSFET is suitable for solar photovoltaic systems and other power inverter equipment. Its high current handling capability and low conduction loss can effectively manage and convert power, ensuring efficient operation of the inverter system.
4. **Industrial Control and Load Switch**: The IRF1404SPBF-VB can be used in high-power load switches and industrial control systems. Its high current handling capability and low power consumption make it an ideal choice for controlling and protecting high-power loads, such as power distribution and motor control modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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