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IRF1404L-VB Product details
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IRF1404L-VB MOSFET Product Introduction
The IRF1404L-VB is a single N-channel MOSFET in a TO262 package, designed for high current and high power applications. The MOSFET has a drain-source voltage (VDS) of up to 40V, capable of handling moderate voltage requirements. Its gate-source voltage (VGS) can withstand a range of ±20V, ensuring stable and reliable switching performance. The turn-on voltage (Vth) is 3.3V, and the on-resistance (RDS(ON)) is as low as 1.7mΩ (at VGS=10V), providing efficient current transfer capability. The IRF1404L-VB uses Trench technology, has excellent current handling capability and low power consumption, and is suitable for applications requiring high current and high efficiency.
The IRF1404L-VB is a single N-channel MOSFET in a TO262 package, designed for high current and high power applications. The MOSFET has a drain-source voltage (VDS) of up to 40V, capable of handling moderate voltage requirements. Its gate-source voltage (VGS) can withstand a range of ±20V, ensuring stable and reliable switching performance. The turn-on voltage (Vth) is 3.3V, and the on-resistance (RDS(ON)) is as low as 1.7mΩ (at VGS=10V), providing efficient current transfer capability. The IRF1404L-VB uses Trench technology, has excellent current handling capability and low power consumption, and is suitable for applications requiring high current and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | 1.7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
IRF1404L-VB MOSFET detailed parameter description
- **Package type**: TO262
- **Device type**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3.3V (typical)
- **On-resistance (RDS(ON))**: 1.7mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Power consumption**: High current handling capability, suitable for high power applications
- **Package characteristics**: TO262 package provides excellent heat dissipation performance and high power density
- **Package type**: TO262
- **Device type**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3.3V (typical)
- **On-resistance (RDS(ON))**: 1.7mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Power consumption**: High current handling capability, suitable for high power applications
- **Package characteristics**: TO262 package provides excellent heat dissipation performance and high power density
Domain and module applications：
Application fields and module examples
1. **High-efficiency power management system**: The low on-resistance and high current handling capability of the IRF1404L-VB make it very suitable for use in high-efficiency power management systems such as DC-DC converters and power adapters. In these applications, the high power density and low power consumption characteristics of MOSFET can improve power conversion efficiency, reduce power consumption, and ensure system stability and reliability.
2. **Motor drive control**: In motor drive systems such as industrial motors, electric vehicles, or fan control, the IRF1404L-VB provides high current drive capability and low power consumption. The low on-resistance of the MOSFET helps reduce energy loss during motor operation, improves the efficiency and response speed of the motor, and is suitable for applications requiring high power and high current.
3. **Power amplifier**: For high-power audio amplifiers and RF amplifiers, the low on-resistance and high current handling capability of the IRF1404L-VB are ideal choices. Its excellent performance can improve the amplifier's power transfer efficiency, reduce power consumption, and improve the overall performance and stability of the system.
4. **Power Conversion and Inverters**: In solar inverters and other power conversion equipment, the IRF1404L-VB's high current capability and low on-resistance enable it to efficiently handle larger power loads. The excellent performance of the MOSFET helps ensure stable power conversion, improve system efficiency and reliability, and is particularly suitable for high-power power conversion and management tasks.
The IRF1404L-VB is a high-current, high-power MOSFET suitable for power management, motor drives, power amplifiers, and power conversion applications that require efficient energy transfer and low power consumption.
1. **High-efficiency power management system**: The low on-resistance and high current handling capability of the IRF1404L-VB make it very suitable for use in high-efficiency power management systems such as DC-DC converters and power adapters. In these applications, the high power density and low power consumption characteristics of MOSFET can improve power conversion efficiency, reduce power consumption, and ensure system stability and reliability.
2. **Motor drive control**: In motor drive systems such as industrial motors, electric vehicles, or fan control, the IRF1404L-VB provides high current drive capability and low power consumption. The low on-resistance of the MOSFET helps reduce energy loss during motor operation, improves the efficiency and response speed of the motor, and is suitable for applications requiring high power and high current.
3. **Power amplifier**: For high-power audio amplifiers and RF amplifiers, the low on-resistance and high current handling capability of the IRF1404L-VB are ideal choices. Its excellent performance can improve the amplifier's power transfer efficiency, reduce power consumption, and improve the overall performance and stability of the system.
4. **Power Conversion and Inverters**: In solar inverters and other power conversion equipment, the IRF1404L-VB's high current capability and low on-resistance enable it to efficiently handle larger power loads. The excellent performance of the MOSFET helps ensure stable power conversion, improve system efficiency and reliability, and is particularly suitable for high-power power conversion and management tasks.
The IRF1404L-VB is a high-current, high-power MOSFET suitable for power management, motor drives, power amplifiers, and power conversion applications that require efficient energy transfer and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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