IRF1312S-VB Product details
Product introduction:
**IRF1312S-VB** is a high-performance N-Channel MOSFET in TO263 package. This MOSFET is designed to handle high voltage and high current applications, using advanced Trench technology, with excellent switching performance and low on-resistance. It is designed to improve the power efficiency and reliability of the system, making it suitable for use in a variety of high-power and high-efficiency electronic devices.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model**: IRF1312S-VB
- **Package**: TO263
- **Configuration**: Single N-Channel
- **Drain to Source Voltage (VDS)**: 80V
- **Gate to Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 10mΩ (VGS=4.5V)
- 6mΩ (VGS=10V)
- **Drain Current (ID)**: 120A
- **Technology**: Trench
Domain and module applications:
The high voltage tolerance and low on-resistance of the **IRF1312S-VB** MOSFET make it suitable for multiple high-power and high-efficiency applications:
1. **High-power Power Management**:
- The IRF1312S-VB is suitable for high-power power management systems such as DC-DC converters (Buck and Boost converters). Its low on-resistance (6mΩ@VGS=10V) can significantly reduce power consumption, improve system efficiency, and handle higher voltages (80V) and currents (120A).
2. **Motor Drive**:
- In motor drive applications, this MOSFET can handle the high currents required during motor startup and operation. Its high current handling capability and low RDS(ON) ensure the stability and efficiency of the motor drive.
3. **Power Switching Applications**:
- The IRF1312S-VB can be used in high-power switching applications, including power switches and load switches. Its high voltage handling capability and low on-resistance enable it to provide reliable switching control in these applications.
4. **Power Converters**:
- In various power converters, such as high-power LED drivers and power adapters, the high current and low on-resistance of the IRF1312S-VB enable it to handle high voltage and high current loads, improving conversion efficiency and system stability.
5. **Industrial Control Systems**:
- In industrial control systems, such as electric valves, heaters, and other high-power devices, the high current handling capability and low on-resistance of the IRF1312S-VB provide efficient switching control, ensuring efficient operation and reliability of the equipment.
With its high voltage handling capability and low on-resistance, the IRF1312S-VB is a preferred solution in various applications that require high power and high efficiency.
Technical support:
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