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IRF1312PBF-VB Product details

Product introduction:

IRF1312PBF-VB MOSFET Product Introduction

The IRF1312PBF-VB is a high-performance single-channel N-type MOSFET in a TO220 package designed for high current and high voltage applications. With a drain-source voltage (VDS) of 80V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for a variety of power management and switch control scenarios. Its gate threshold voltage (Vth) is 3V, ensuring stable switching performance at relatively low gate voltages. The RDS(ON) value of the IRF1312PBF-VB is 9mΩ at VGS=4.5V and 7mΩ at VGS=10V, showing its low on-resistance, which helps reduce power losses. The MOSFET is capable of withstanding continuous drain currents of up to 100A, making it suitable for applications with high power density and high efficiency. The design using trench technology improves switching performance and energy efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 80V 3V 100A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package:** TO220
- **Configuration:** Single channel N-type
- **Drain-source voltage (VDS):** 80V
- **Gate-source voltage (VGS):** ±20V
- **Gate threshold voltage (Vth):** 3V
- **RDS(ON):** 9mΩ @ VGS=4.5V; 7mΩ @ VGS=10V
- **Drain current (ID):** 100A
- **Technology:** Trench technology

Domain and module applications:

Application Examples

Examples of applications of the IRF1312PBF-VB MOSFET in multiple fields and modules are as follows:

1. **Power Management System:** In switch mode power supplies (SMPS) and DC-DC converters, the low on-resistance and high current handling capability of this MOSFET make it ideal for high-efficiency power switches, which can significantly reduce switching losses and improve the overall efficiency of the system.

2. **Motor Drive:** Due to its high current handling capability, the IRF1312PBF-VB is suitable for motor control systems such as electric vehicles and industrial motor drives, which can provide stable performance under high power loads and meet demanding operating requirements.

3. **Battery Management System (BMS):** In battery protection and management circuits, this MOSFET can be used to control the charging and discharging process, and its low RDS(ON) value helps reduce power losses and improve system reliability and efficiency.

4. **Inverter Applications:** In solar inverters and other high-power inverters, IRF1312PBF-VB can achieve efficient DC to AC conversion. Its high switching speed and low on-resistance improve power conversion efficiency and meet the needs of high-power loads.

5. **High-power LED Driver:** In high-power LED lighting systems, the superior switching performance and low conduction loss of this MOSFET help ensure the stability and energy efficiency of LED lighting, providing a reliable drive solution.

These application examples demonstrate the wide applicability of IRF1312PBF-VB in different fields. Its high current and high voltage performance make it an ideal choice for a variety of high-power and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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