IRF1310NS-VB Product details
Product introduction:
IRF1310NS-VB is a high-performance N-channel MOSFET in TO263 package. The device is designed to handle high voltage and high current applications, and can withstand drain-source voltage (VDS) up to 100V and gate-source voltage (VGS) of ±20V. Manufactured using advanced trench technology, the IRF1310NS-VB has excellent conduction performance, and its on-resistance (RDS(ON) is 35mΩ@VGS=4.5V and 30mΩ@VGS=10V) ensures low power consumption and high-efficiency operation. This MOSFET can handle drain current (ID) up to 45A, making it perform well in high power and high voltage environments, and is suitable for a variety of high load and switching applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS=4.5V
- 30mΩ @ VGS=10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench
Domain and module applications:
1. **Power Management and DC-DC Converters**: IRF1310NS-VB performs well in power management systems, especially for high voltage DC-DC converters and power switches. Its low on-resistance and high current handling capability help reduce power consumption and improve system efficiency, suitable for applications that require high-efficiency power conversion.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In the motor drive and battery management systems of electric vehicles and hybrid vehicles, this MOSFET provides a reliable high-voltage switching solution. Its high current capability and low on-resistance can effectively handle the power requirements of electric vehicles and improve the overall performance and reliability of the vehicle.
3. **Industrial Automation and Motor Drive**: IRF1310NS-VB is suitable for high-power motor drive and load control applications in industrial automation. Its high voltage and high current resistance characteristics enable it to operate stably under heavy loads and high-frequency switching environments, improving the efficiency and durability of industrial equipment.
4. **Communication Infrastructure**: In communication equipment and data centers, this MOSFET can be used in high-power power management modules and amplifiers. Its low on-resistance and high voltage handling capabilities help improve the signal quality and overall performance of the equipment, ensuring efficient and stable operation of the communication system.
With its high voltage and high current handling capabilities, the IRF1310NS-VB is suitable for a variety of high-power and high-efficiency application scenarios, providing a stable and reliable switching solution for the system.
Technical support:
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