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IRF1310NSTRR-VB Product details
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Product Introduction - IRF1310NSTRR-VB MOSFET
The IRF1310NSTRR-VB is a single-channel N-type MOSFET in a TO263 package, designed for high-efficiency, high-current applications. With a drain-source voltage (VDS) rating of 100V and a gate-source voltage (VGS) rating of ±20V, this MOSFET can operate stably in a high-voltage environment. Its threshold voltage (Vth) is 1.8V, and its on-resistance (RDS(ON)) is 35mΩ at a VGS of 4.5V and 30mΩ at a VGS of 10V, supporting a maximum drain current of 45A. Using trench technology, the IRF1310NSTRR-VB provides low on-resistance and high switching efficiency, making it ideal for high-current and high-efficiency power conversion and switching applications.
The IRF1310NSTRR-VB is a single-channel N-type MOSFET in a TO263 package, designed for high-efficiency, high-current applications. With a drain-source voltage (VDS) rating of 100V and a gate-source voltage (VGS) rating of ±20V, this MOSFET can operate stably in a high-voltage environment. Its threshold voltage (Vth) is 1.8V, and its on-resistance (RDS(ON)) is 35mΩ at a VGS of 4.5V and 30mΩ at a VGS of 10V, supporting a maximum drain current of 45A. Using trench technology, the IRF1310NSTRR-VB provides low on-resistance and high switching efficiency, making it ideal for high-current and high-efficiency power conversion and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | 30mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 45A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 35mΩ @ VGS = 4.5V
- 30mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 45A
- **Technology**: Trench
Domain and module applications：
Applicable fields and application examples of modules
1. **Power converter**: The IRF1310NSTRR-VB is very suitable for high-efficiency power converters, such as DC-DC converters, due to its high current handling capability and low on-resistance. In these applications, it can effectively reduce energy loss and improve power conversion efficiency, especially suitable for high current output occasions.
2. **Motor control system**: In motor drive systems, such as DC motor drives or brushless DC motor (BLDC) controllers, the IRF1310NSTRR-VB provides high current handling capability and low conduction loss, and can stably control the start, run and stop of the motor.
3. **Power amplifier**: This MOSFET can be used in high-power audio amplifiers or RF power amplifiers, and can handle higher voltages and currents to ensure that the amplifier is stable and efficient under high power operation.
4. **Battery Management System**: In battery management systems, especially in electric vehicles and energy storage systems, the IRF1310NSTRR-VB can be used as a high-current load switch, providing reliable switching performance to ensure safe battery charging and discharging and overall system stability.
5. **Inverter Application**: In applications such as solar inverters that require high-voltage DC to AC conversion, the high current capability and low on-resistance of the IRF1310NSTRR-VB ensure efficient power conversion and system reliability.
1. **Power converter**: The IRF1310NSTRR-VB is very suitable for high-efficiency power converters, such as DC-DC converters, due to its high current handling capability and low on-resistance. In these applications, it can effectively reduce energy loss and improve power conversion efficiency, especially suitable for high current output occasions.
2. **Motor control system**: In motor drive systems, such as DC motor drives or brushless DC motor (BLDC) controllers, the IRF1310NSTRR-VB provides high current handling capability and low conduction loss, and can stably control the start, run and stop of the motor.
3. **Power amplifier**: This MOSFET can be used in high-power audio amplifiers or RF power amplifiers, and can handle higher voltages and currents to ensure that the amplifier is stable and efficient under high power operation.
4. **Battery Management System**: In battery management systems, especially in electric vehicles and energy storage systems, the IRF1310NSTRR-VB can be used as a high-current load switch, providing reliable switching performance to ensure safe battery charging and discharging and overall system stability.
5. **Inverter Application**: In applications such as solar inverters that require high-voltage DC to AC conversion, the high current capability and low on-resistance of the IRF1310NSTRR-VB ensure efficient power conversion and system reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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