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IRF1302S-VB Product details
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IRF1302S-VB MOSFET Product Introduction
The IRF1302S-VB is a single N-channel MOSFET in a TO263 package designed for high current and low voltage applications. With a drain-source voltage (VDS) of 30V, this MOSFET is capable of handling moderate voltage requirements. Its gate-source voltage (VGS) can withstand ±20V, ensuring reliable switching operation. The turn-on voltage (Vth) is as low as 1.7V, providing fast switching capability, and the on-resistance (RDS(ON)) is only 2.3mΩ at VGS=10V, ensuring low power operation. Using Trench technology, the IRF1302S-VB provides excellent current handling capability and efficient energy transfer, suitable for scenarios requiring high current handling and low power consumption.
The IRF1302S-VB is a single N-channel MOSFET in a TO263 package designed for high current and low voltage applications. With a drain-source voltage (VDS) of 30V, this MOSFET is capable of handling moderate voltage requirements. Its gate-source voltage (VGS) can withstand ±20V, ensuring reliable switching operation. The turn-on voltage (Vth) is as low as 1.7V, providing fast switching capability, and the on-resistance (RDS(ON)) is only 2.3mΩ at VGS=10V, ensuring low power operation. Using Trench technology, the IRF1302S-VB provides excellent current handling capability and efficient energy transfer, suitable for scenarios requiring high current handling and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IRF1302S-VB MOSFET detailed parameter description
- **Package type**: TO263
- **Device type**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V (typical)
- **On-resistance (RDS(ON))**: 3.2mΩ @ VGS=4.5V, 2.3mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Power consumption**: High current handling capability, suitable for low voltage and high power applications
- **Package characteristics**: TO263 package provides excellent heat dissipation performance and high power density
- **Package type**: TO263
- **Device type**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 1.7V (typical)
- **On-resistance (RDS(ON))**: 3.2mΩ @ VGS=4.5V, 2.3mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Power consumption**: High current handling capability, suitable for low voltage and high power applications
- **Package characteristics**: TO263 package provides excellent heat dissipation performance and high power density
Domain and module applications：
Application fields and module examples
1. **Efficient power management**: The low on-resistance and high current handling capability of the IRF1302S-VB make it particularly suitable for efficient power management systems, including DC-DC converters and power adapters. Its high power density and low power consumption characteristics help improve the conversion efficiency of power supplies, and are suitable for applications in high-performance computing devices and power-intensive systems.
2. **Motor drive applications**: In motor control systems for industrial motors and electric vehicles, the IRF1302S-VB provides reliable high-current drive capabilities. Its low on-resistance reduces energy loss during motor operation, improving the overall efficiency of the system and the response speed of the motor.
3. **Power amplifier**: For audio power amplifiers and RF amplifiers, the low on-resistance and high current capability of the IRF1302S-VB make it an ideal choice. In these applications, the excellent performance of MOSFETs ensures efficient power transmission, reduces power consumption, and improves the overall performance of the amplifier.
4. **Power Conversion and Inverters**: In solar inverters and other power conversion devices, the IRF1302S-VB's high current handling capability and low power consumption enable it to handle higher power loads. MOSFETs ensure stable power conversion, improving system efficiency and reliability.
The IRF1302S-VB is a MOSFET with high current handling capability and low power consumption. It is widely used in power management, motor drives, power amplifiers, and power conversion, where efficient energy transfer and low power consumption are required.
1. **Efficient power management**: The low on-resistance and high current handling capability of the IRF1302S-VB make it particularly suitable for efficient power management systems, including DC-DC converters and power adapters. Its high power density and low power consumption characteristics help improve the conversion efficiency of power supplies, and are suitable for applications in high-performance computing devices and power-intensive systems.
2. **Motor drive applications**: In motor control systems for industrial motors and electric vehicles, the IRF1302S-VB provides reliable high-current drive capabilities. Its low on-resistance reduces energy loss during motor operation, improving the overall efficiency of the system and the response speed of the motor.
3. **Power amplifier**: For audio power amplifiers and RF amplifiers, the low on-resistance and high current capability of the IRF1302S-VB make it an ideal choice. In these applications, the excellent performance of MOSFETs ensures efficient power transmission, reduces power consumption, and improves the overall performance of the amplifier.
4. **Power Conversion and Inverters**: In solar inverters and other power conversion devices, the IRF1302S-VB's high current handling capability and low power consumption enable it to handle higher power loads. MOSFETs ensure stable power conversion, improving system efficiency and reliability.
The IRF1302S-VB is a MOSFET with high current handling capability and low power consumption. It is widely used in power management, motor drives, power amplifiers, and power conversion, where efficient energy transfer and low power consumption are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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