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IRF1302L-VB Product details
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IRF1302L-VB Product Introduction
The IRF1302L-VB is a single N-channel MOSFET in a TO262 package, designed for high current, high efficiency applications. It has a breakdown voltage of 30V, suitable for medium voltage power management and switching applications. The on-resistance of this MOSFET is very low, 4mΩ at VGS=10V, 7mΩ at VGS=4.5V, and can carry up to 90A of continuous current. The IRF1302L-VB uses advanced Trench technology to ensure excellent switching performance and low switching losses, making it perform well in a variety of high-efficiency applications.
The IRF1302L-VB is a single N-channel MOSFET in a TO262 package, designed for high current, high efficiency applications. It has a breakdown voltage of 30V, suitable for medium voltage power management and switching applications. The on-resistance of this MOSFET is very low, 4mΩ at VGS=10V, 7mΩ at VGS=4.5V, and can carry up to 90A of continuous current. The IRF1302L-VB uses advanced Trench technology to ensure excellent switching performance and low switching losses, making it perform well in a variety of high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 90A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 90A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 30V | 1.7V | 90A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
IRF1302L-VB Detailed parameter description
- **Package**: TO262
- **Channel type**: Single N-channel
- **Breakdown voltage (VDS)**: 30V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 4mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 90A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: Depends on packaging and heat dissipation
- **Switching performance**: With low on-resistance and fast switching speed, it is suitable for high current and high power applications.
- **Package**: TO262
- **Channel type**: Single N-channel
- **Breakdown voltage (VDS)**: 30V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 7mΩ @ VGS=4.5V
- 4mΩ @ VGS=10V
- **Maximum continuous drain current (ID)**: 90A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Power consumption**: Depends on packaging and heat dissipation
- **Switching performance**: With low on-resistance and fast switching speed, it is suitable for high current and high power applications.
Domain and module applications：
Applicable fields and module application examples
1. **High-efficiency power management**: IRF1302L-VB is suitable for high-efficiency power management systems, such as high-power DC-DC converters and power modules. Due to its low on-resistance and high current capability, it can effectively reduce power consumption and improve the efficiency and stability of the power system.
2. **Electric vehicle drive system**: In the motor drive system of electric vehicles, IRF1302L-VB can be used as a current switch. Its high current carrying capacity and low on-resistance ensure the efficient operation of the motor and improve the performance and reliability of electric vehicles.
3. **Power conversion and inverter**: This MOSFET is also suitable for power converters and inverter modules, such as solar inverters and uninterruptible power supply (UPS) systems. Its excellent switching performance and low loss characteristics make it outstanding in high-power and high-efficiency applications.
4. **Industrial Automation Control**: In industrial automation systems, such as electric actuators and control modules, the IRF1302L-VB can be used as a high-power switch. Its excellent switching speed and low on-resistance can ensure stable control in high-current environments, improving overall system performance and efficiency.
These application examples demonstrate the excellent performance of the IRF1302L-VB in handling high current and high power conditions, making it an ideal choice for a variety of power management and power control applications.
1. **High-efficiency power management**: IRF1302L-VB is suitable for high-efficiency power management systems, such as high-power DC-DC converters and power modules. Due to its low on-resistance and high current capability, it can effectively reduce power consumption and improve the efficiency and stability of the power system.
2. **Electric vehicle drive system**: In the motor drive system of electric vehicles, IRF1302L-VB can be used as a current switch. Its high current carrying capacity and low on-resistance ensure the efficient operation of the motor and improve the performance and reliability of electric vehicles.
3. **Power conversion and inverter**: This MOSFET is also suitable for power converters and inverter modules, such as solar inverters and uninterruptible power supply (UPS) systems. Its excellent switching performance and low loss characteristics make it outstanding in high-power and high-efficiency applications.
4. **Industrial Automation Control**: In industrial automation systems, such as electric actuators and control modules, the IRF1302L-VB can be used as a high-power switch. Its excellent switching speed and low on-resistance can ensure stable control in high-current environments, improving overall system performance and efficiency.
These application examples demonstrate the excellent performance of the IRF1302L-VB in handling high current and high power conditions, making it an ideal choice for a variety of power management and power control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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