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IRF1104S-VB Product details
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IRF1104S-VB Product Introduction
**IRF1104S-VB** is a high current, high conduction capability N-channel MOSFET in TO263 package. It uses Trench technology and can handle up to 100A of drain current at a drain-source voltage of 40V. With its extremely low on-resistance and moderate threshold voltage, this MOSFET is suitable for efficient energy management and power switching applications, especially in situations where high current and high frequency need to be handled.
**IRF1104S-VB** is a high current, high conduction capability N-channel MOSFET in TO263 package. It uses Trench technology and can handle up to 100A of drain current at a drain-source voltage of 40V. With its extremely low on-resistance and moderate threshold voltage, this MOSFET is suitable for efficient energy management and power switching applications, especially in situations where high current and high frequency need to be handled.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Model**: IRF1104S-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ (VGS=4.5V)
- 5mΩ (VGS=10V)
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Model**: IRF1104S-VB
- **Package**: TO263
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 40V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 6mΩ (VGS=4.5V)
- 5mΩ (VGS=10V)
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
**1. High power switching **
The IRF1104S-VB is ideal for high power switching applications such as DC-DC converters and power management systems. In these applications, its low on-resistance and high current capability help achieve efficient energy conversion, reduce power losses, and improve the overall efficiency and stability of the system.
**2. Electric vehicle power supply **
In electric vehicles, this MOSFET can be used as a switching element for battery management systems and motor drives. Its high current handling capability and low on-resistance enable it to handle high power loads in electric vehicles, improving the energy efficiency and performance of electric vehicles.
**3. Computer and communication equipment power supply **
The IRF1104S-VB is suitable for power management and protection circuits in computer and communication equipment. Its high current capability and low on-resistance ensure the stability and efficiency of the power supply, making it suitable for power conversion applications in computer power supply and communication equipment.
**4. Industrial Motor Control**
In industrial motor control systems, the high current carrying capability of the IRF1104S-VB enables it to effectively drive large motors. Its low on-resistance reduces heat generation and power consumption, thereby improving the reliability and efficiency of motor control systems.
These application examples demonstrate the wide applicability of the IRF1104S-VB in scenarios that handle high current and low on-resistance, especially in areas that require efficient energy conversion and reliable power management.
**1. High power switching **
The IRF1104S-VB is ideal for high power switching applications such as DC-DC converters and power management systems. In these applications, its low on-resistance and high current capability help achieve efficient energy conversion, reduce power losses, and improve the overall efficiency and stability of the system.
**2. Electric vehicle power supply **
In electric vehicles, this MOSFET can be used as a switching element for battery management systems and motor drives. Its high current handling capability and low on-resistance enable it to handle high power loads in electric vehicles, improving the energy efficiency and performance of electric vehicles.
**3. Computer and communication equipment power supply **
The IRF1104S-VB is suitable for power management and protection circuits in computer and communication equipment. Its high current capability and low on-resistance ensure the stability and efficiency of the power supply, making it suitable for power conversion applications in computer power supply and communication equipment.
**4. Industrial Motor Control**
In industrial motor control systems, the high current carrying capability of the IRF1104S-VB enables it to effectively drive large motors. Its low on-resistance reduces heat generation and power consumption, thereby improving the reliability and efficiency of motor control systems.
These application examples demonstrate the wide applicability of the IRF1104S-VB in scenarios that handle high current and low on-resistance, especially in areas that require efficient energy conversion and reliable power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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