Featured Model

Last updated:

IRF1104STRL-VB Product details

Product introduction:

IRF1104STRL-VB MOSFET Product Introduction

The IRF1104STRL-VB is a high-performance single-channel N-type MOSFET in TO263 package, designed for high current and high efficiency applications. With a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for a variety of power management and switch control applications. Its gate threshold voltage (Vth) is 2.5V, allowing stable switching at lower gate voltages. The RDS(ON) value of the IRF1104STRL-VB is 6mΩ at VGS=4.5V and 5mΩ at VGS=10V, showing its excellent low on-resistance, which can significantly reduce power losses. The MOSFET can handle continuous drain currents of up to 100A and is suitable for applications requiring high power density and high efficiency. Its trench technology design enhances switching performance and provides higher energy efficiency and reliability.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 40V 2.5V 100A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 40V 2.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 40V 2.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description

- **Package:** TO263
- **Configuration:** Single channel N-type
- **Drain-source voltage (VDS):** 40V
- **Gate-source voltage (VGS):** ±20V
- **Gate threshold voltage (Vth):** 2.5V
- **RDS(ON):** 6mΩ @ VGS=4.5V; 5mΩ @ VGS=10V
- **Drain current (ID):** 100A
- **Technology:** Trench technology

Domain and module applications:

Application Examples

Examples of applications of the IRF1104STRL-VB MOSFET in multiple fields and modules are as follows:

1. **Power Management System:** In high-efficiency switch-mode power supplies (SMPS) and DC-DC converters, the low on-resistance and high current handling capability of the IRF1104STRL-VB make it suitable for high-efficiency power switches, which can effectively reduce switching losses and improve overall efficiency.

2. **Motor Drive:** Due to its high current handling capability, this MOSFET is suitable for motor control systems, including electric vehicles and industrial motor drives, which can operate stably in high-power environments and provide reliable performance.

3. **Battery Management System (BMS):** In battery protection and management circuits, the IRF1104STRL-VB can help control the charging and discharging process, and its low RDS(ON) value reduces power losses and improves the overall efficiency and reliability of the system.

4. **Inverter Applications:** In solar inverters and other high-power inverters, the MOSFET's high switching speed and low on-resistance enable efficient DC to AC conversion, providing stable power output to meet the needs of high-power loads.

5. **High-power LED Drivers:** IRF1104STRL-VB can be used in high-power LED lighting systems, where its excellent switching performance and low conduction losses help ensure the stability and energy efficiency of LED lighting.

These application examples demonstrate the wide applicability of IRF1104STRL-VB in various fields, and its superior performance makes it an ideal choice for high-current, high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat