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IRF1104L-VB Product details
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1. IRF1104L-VB Product Introduction
IRF1104L-VB is a high-performance N-channel MOSFET in TO262 package. The MOSFET can withstand a drain-source voltage (VDS) of up to 40V and a gate-source voltage (VGS) of ±20V. It uses advanced trench technology, has a very low on-resistance (RDS(ON) of 5mΩ@VGS=10V), and can handle a drain current (ID) of up to 100A. The IRF1104L-VB is designed for high-efficiency power switching and power management applications, providing excellent current transfer efficiency and switching performance, and is suitable for a variety of high-power demand scenarios.
IRF1104L-VB is a high-performance N-channel MOSFET in TO262 package. The MOSFET can withstand a drain-source voltage (VDS) of up to 40V and a gate-source voltage (VGS) of ±20V. It uses advanced trench technology, has a very low on-resistance (RDS(ON) of 5mΩ@VGS=10V), and can handle a drain current (ID) of up to 100A. The IRF1104L-VB is designed for high-efficiency power switching and power management applications, providing excellent current transfer efficiency and switching performance, and is suitable for a variety of high-power demand scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
II. IRF1104L-VB Parameter Description
- **Package**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
- **Package**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 5mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench
Domain and module applications：
III. Application Fields and Modules
1. **Power Management and DC-DC Converters**: IRF1104L-VB performs well in power management systems, especially for high current DC-DC converters and power switches. Its low on-resistance significantly reduces energy loss and improves power conversion efficiency, making it suitable for power designs that require high efficiency and low heat.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In the motor drive systems and battery management systems of electric vehicles and hybrid vehicles, this MOSFET provides an efficient power switching solution. Its ability to withstand high currents and low on-resistance helps improve the overall performance and stability of electric vehicle power systems.
3. **Industrial Automation and Motor Drive**: IRF1104L-VB is suitable for high power motor drive and load control applications in industrial automation. Its high current handling capability and excellent switching performance make it reliable in environments with high loads and frequent switching, helping to improve the efficiency and durability of industrial equipment.
4. **Communication Infrastructure**: In communication equipment and infrastructure, this MOSFET can be used in high-power RF amplifiers and power management modules. Its low on-resistance and high current capability help improve the signal quality and overall performance of the equipment, ensuring efficient and stable operation of the communication system.
With its excellent current handling capability and low power consumption characteristics, the IRF1104L-VB is suitable for a variety of high-power and high-efficiency application scenarios, providing a reliable switching solution for electronic systems.
1. **Power Management and DC-DC Converters**: IRF1104L-VB performs well in power management systems, especially for high current DC-DC converters and power switches. Its low on-resistance significantly reduces energy loss and improves power conversion efficiency, making it suitable for power designs that require high efficiency and low heat.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**: In the motor drive systems and battery management systems of electric vehicles and hybrid vehicles, this MOSFET provides an efficient power switching solution. Its ability to withstand high currents and low on-resistance helps improve the overall performance and stability of electric vehicle power systems.
3. **Industrial Automation and Motor Drive**: IRF1104L-VB is suitable for high power motor drive and load control applications in industrial automation. Its high current handling capability and excellent switching performance make it reliable in environments with high loads and frequent switching, helping to improve the efficiency and durability of industrial equipment.
4. **Communication Infrastructure**: In communication equipment and infrastructure, this MOSFET can be used in high-power RF amplifiers and power management modules. Its low on-resistance and high current capability help improve the signal quality and overall performance of the equipment, ensuring efficient and stable operation of the communication system.
With its excellent current handling capability and low power consumption characteristics, the IRF1104L-VB is suitable for a variety of high-power and high-efficiency application scenarios, providing a reliable switching solution for electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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