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IRF1018ESTRLPBF-VB Product details
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Product Introduction - IRF1018ESTRLPBF-VB MOSFET
The IRF1018ESTRLPBF-VB is a single-channel N-type MOSFET in a TO263 package, designed for high-efficiency, high-current switching applications. With a drain-source voltage (VDS) rating of 60V and a gate-source voltage (VGS) rating of ±20V, the device is suitable for use in a variety of high-voltage environments. Its threshold voltage (Vth) is 3V, and its on-resistance (RDS(ON)) is only 4mΩ @ VGS = 10V, capable of handling drain currents up to 150A. Using trench technology, this MOSFET provides extremely low on-resistance and excellent switching performance, making it suitable for high-power and high-efficiency power conversion and switching applications.
The IRF1018ESTRLPBF-VB is a single-channel N-type MOSFET in a TO263 package, designed for high-efficiency, high-current switching applications. With a drain-source voltage (VDS) rating of 60V and a gate-source voltage (VGS) rating of ±20V, the device is suitable for use in a variety of high-voltage environments. Its threshold voltage (Vth) is 3V, and its on-resistance (RDS(ON)) is only 4mΩ @ VGS = 10V, capable of handling drain currents up to 150A. Using trench technology, this MOSFET provides extremely low on-resistance and excellent switching performance, making it suitable for high-power and high-efficiency power conversion and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package type**: TO263
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
- **Package type**: TO263
- **Configuration**: Single channel N-type MOSFET
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 150A
- **Technology**: Trench
Domain and module applications：
Applicable fields and module application examples
1. **High-power power management**: The IRF1018ESTRLPBF-VB is very suitable for high-power power management modules such as DC-DC converters and power switches due to its low on-resistance and high current capability. It can effectively reduce conduction losses and improve power conversion efficiency, and is suitable for server power supplies and industrial power systems.
2. **Motor drive system**: This MOSFET performs well in motor drive applications, especially in DC motor drives or brushless DC motor (BLDC) controllers that require high current and high efficiency, providing stable switching and efficient current handling capabilities.
3. **Power amplifier**: In power amplifier applications, such as high-power audio amplifiers or RF power amplifiers, the high current handling capability and low on-resistance of the IRF1018ESTRLPBF-VB ensure system stability and high efficiency.
4. **Battery Management System**: In battery management and protection systems, especially in applications that require high current load switches, such as electric vehicles or large-capacity energy storage systems, the IRF1018ESTRLPBF-VB can effectively control the battery charging and discharging process, improving the safety and reliability of the system.
5. **Solar Inverter**: This MOSFET is also suitable for high-voltage DC-to-AC applications such as solar inverters, and can handle high current and high power requirements, improving the efficiency and reliability of the inverter.
1. **High-power power management**: The IRF1018ESTRLPBF-VB is very suitable for high-power power management modules such as DC-DC converters and power switches due to its low on-resistance and high current capability. It can effectively reduce conduction losses and improve power conversion efficiency, and is suitable for server power supplies and industrial power systems.
2. **Motor drive system**: This MOSFET performs well in motor drive applications, especially in DC motor drives or brushless DC motor (BLDC) controllers that require high current and high efficiency, providing stable switching and efficient current handling capabilities.
3. **Power amplifier**: In power amplifier applications, such as high-power audio amplifiers or RF power amplifiers, the high current handling capability and low on-resistance of the IRF1018ESTRLPBF-VB ensure system stability and high efficiency.
4. **Battery Management System**: In battery management and protection systems, especially in applications that require high current load switches, such as electric vehicles or large-capacity energy storage systems, the IRF1018ESTRLPBF-VB can effectively control the battery charging and discharging process, improving the safety and reliability of the system.
5. **Solar Inverter**: This MOSFET is also suitable for high-voltage DC-to-AC applications such as solar inverters, and can handle high current and high power requirements, improving the efficiency and reliability of the inverter.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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