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IRF1018ESLPBF-VB Product details
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IRF1018ESLPBF-VB Product Introduction
The IRF1018ESLPBF-VB is a high-performance single N-channel MOSFET in TO262 package, designed for high current and high power applications. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, making it suitable for a variety of power management and power switching applications. Using advanced Trench technology, the IRF1018ESLPBF-VB has an extremely low on-resistance (RDS(ON)) of 3mΩ at a gate drive of 10V and can handle drain currents of up to 210A. This makes the IRF1018ESLPBF-VB particularly suitable for applications that require high efficiency and high current handling.
The IRF1018ESLPBF-VB is a high-performance single N-channel MOSFET in TO262 package, designed for high current and high power applications. It has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, making it suitable for a variety of power management and power switching applications. Using advanced Trench technology, the IRF1018ESLPBF-VB has an extremely low on-resistance (RDS(ON)) of 3mΩ at a gate drive of 10V and can handle drain currents of up to 210A. This makes the IRF1018ESLPBF-VB particularly suitable for applications that require high efficiency and high current handling.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
IRF1018ESLPBF-VB Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench
- **Maximum power dissipation**: Depends on heat dissipation conditions and actual design
- **Operating temperature range**: Typically -55°C to +150°C (specific data please refer to the data sheet)
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench
- **Maximum power dissipation**: Depends on heat dissipation conditions and actual design
- **Operating temperature range**: Typically -55°C to +150°C (specific data please refer to the data sheet)
Domain and module applications：
Applications and module examples
1. **High-power power conversion**
The IRF1018ESLPBF-VB is particularly suitable for high-power power conversion modules such as high-power DC-DC converters and power distribution systems due to its extremely low RDS(ON) and high current handling capability. This MOSFET can provide efficient switching performance under high current conditions, thereby improving the energy efficiency of the overall system.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the battery management system and motor drive system of electric vehicles and hybrid vehicles, the high current handling capability and low power consumption characteristics of the IRF1018ESLPBF-VB can effectively support high-current power and drive applications. This MOSFET can withstand the high power requirements of electric vehicles while reducing energy losses in the system.
3. **Industrial Power Supplies and High-Power Loads**
In industrial applications, the IRF1018ESLPBF-VB can be used for switching and controlling high-power loads, such as inverters and motor control systems. Its high current carrying capacity and low on-resistance can meet the stringent requirements of industrial power management and ensure the stability and efficiency of the system.
4. **Data Center Power Management**
In the power system of the data center, the IRF1018ESLPBF-VB can provide efficient power conversion and switching functions. Due to its low RDS(ON) and high current capability, this MOSFET can effectively reduce power consumption and improve the efficiency of the power module, and is suitable for high-density server and data center environments.
Overall, the IRF1018ESLPBF-VB is suitable for various application scenarios with high power, high efficiency and high current requirements with its excellent current handling capability and low power consumption characteristics.
1. **High-power power conversion**
The IRF1018ESLPBF-VB is particularly suitable for high-power power conversion modules such as high-power DC-DC converters and power distribution systems due to its extremely low RDS(ON) and high current handling capability. This MOSFET can provide efficient switching performance under high current conditions, thereby improving the energy efficiency of the overall system.
2. **Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)**
In the battery management system and motor drive system of electric vehicles and hybrid vehicles, the high current handling capability and low power consumption characteristics of the IRF1018ESLPBF-VB can effectively support high-current power and drive applications. This MOSFET can withstand the high power requirements of electric vehicles while reducing energy losses in the system.
3. **Industrial Power Supplies and High-Power Loads**
In industrial applications, the IRF1018ESLPBF-VB can be used for switching and controlling high-power loads, such as inverters and motor control systems. Its high current carrying capacity and low on-resistance can meet the stringent requirements of industrial power management and ensure the stability and efficiency of the system.
4. **Data Center Power Management**
In the power system of the data center, the IRF1018ESLPBF-VB can provide efficient power conversion and switching functions. Due to its low RDS(ON) and high current capability, this MOSFET can effectively reduce power consumption and improve the efficiency of the power module, and is suitable for high-density server and data center environments.
Overall, the IRF1018ESLPBF-VB is suitable for various application scenarios with high power, high efficiency and high current requirements with its excellent current handling capability and low power consumption characteristics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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