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IRF1010ZLPBF-VB Product details
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IRF1010ZLPBF-VB MOSFET Product Introduction
The IRF1010ZLPBF-VB is a single N-channel MOSFET in a TO262 package, designed for high current and high power applications. Its drain-source voltage (VDS) is as high as 60V, enabling it to handle higher voltage circuit requirements. The gate-source voltage (VGS) of the MOSFET can withstand a range of ±20V, ensuring stable switching performance. The turn-on voltage (Vth) is 3.5V, providing fast switching capability, and the on-resistance (RDS(ON)) is as low as 3mΩ (at VGS=10V), which is suitable for high current handling. The IRF1010ZLPBF-VB uses advanced Trench technology to provide efficient energy transfer and low power consumption, making it ideal for applications requiring high current and low power consumption.
The IRF1010ZLPBF-VB is a single N-channel MOSFET in a TO262 package, designed for high current and high power applications. Its drain-source voltage (VDS) is as high as 60V, enabling it to handle higher voltage circuit requirements. The gate-source voltage (VGS) of the MOSFET can withstand a range of ±20V, ensuring stable switching performance. The turn-on voltage (Vth) is 3.5V, providing fast switching capability, and the on-resistance (RDS(ON)) is as low as 3mΩ (at VGS=10V), which is suitable for high current handling. The IRF1010ZLPBF-VB uses advanced Trench technology to provide efficient energy transfer and low power consumption, making it ideal for applications requiring high current and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
IRF1010ZLPBF-VB MOSFET Detailed parameter description
- **Package type**: TO262
- **Device type**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3.5V (typical)
- **On-resistance (RDS(ON))**: 3mΩ @ VGS=10V
- **Continuous drain current (ID)**: 210A
- **Technology**: Trench technology
- **Power consumption**: High power handling capability, suitable for high current applications
- **Package characteristics**: TO262 package provides excellent heat dissipation performance and high power density
- **Package type**: TO262
- **Device type**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3.5V (typical)
- **On-resistance (RDS(ON))**: 3mΩ @ VGS=10V
- **Continuous drain current (ID)**: 210A
- **Technology**: Trench technology
- **Power consumption**: High power handling capability, suitable for high current applications
- **Package characteristics**: TO262 package provides excellent heat dissipation performance and high power density
Domain and module applications：
Application fields and module examples
1. **Power management and DC-DC converter**: The low on-resistance and high current handling capability of IRF1010ZLPBF-VB make it suitable for efficient DC-DC converters and power management systems. In these applications, MOSFET can effectively reduce power consumption, improve conversion efficiency, and ensure stable power output, which is suitable for use in high-power computing devices and industrial power supplies.
2. **Motor drive system**: In motor drive applications for industrial motors and electric vehicles, the high current capability and low on-resistance of IRF1010ZLPBF-VB ensure stable and reliable current transmission. Its efficient energy transmission helps improve the operating efficiency and response speed of the motor, and is suitable for motor control systems that require high current and high power.
3. **Power amplifier**: For high-power audio amplifiers and RF amplifiers, IRF1010ZLPBF-VB provides excellent performance. In these applications, the MOSFET's low on-resistance and high current capability can effectively drive the load, reduce power losses, and improve the overall performance and stability of the system.
4. **Power Conversion and Inverters**: In solar inverters and other power conversion equipment, the high current and low on-resistance characteristics of the IRF1010ZLPBF-VB make it suitable for high-power power conversion tasks. The MOSFET is able to handle higher power loads, ensuring system reliability and high efficiency.
The IRF1010ZLPBF-VB is a high-current, high-power MOSFET that is widely used in power management, motor drives, power amplifiers, and power conversion, where efficient energy transfer and low power consumption are required.
1. **Power management and DC-DC converter**: The low on-resistance and high current handling capability of IRF1010ZLPBF-VB make it suitable for efficient DC-DC converters and power management systems. In these applications, MOSFET can effectively reduce power consumption, improve conversion efficiency, and ensure stable power output, which is suitable for use in high-power computing devices and industrial power supplies.
2. **Motor drive system**: In motor drive applications for industrial motors and electric vehicles, the high current capability and low on-resistance of IRF1010ZLPBF-VB ensure stable and reliable current transmission. Its efficient energy transmission helps improve the operating efficiency and response speed of the motor, and is suitable for motor control systems that require high current and high power.
3. **Power amplifier**: For high-power audio amplifiers and RF amplifiers, IRF1010ZLPBF-VB provides excellent performance. In these applications, the MOSFET's low on-resistance and high current capability can effectively drive the load, reduce power losses, and improve the overall performance and stability of the system.
4. **Power Conversion and Inverters**: In solar inverters and other power conversion equipment, the high current and low on-resistance characteristics of the IRF1010ZLPBF-VB make it suitable for high-power power conversion tasks. The MOSFET is able to handle higher power loads, ensuring system reliability and high efficiency.
The IRF1010ZLPBF-VB is a high-current, high-power MOSFET that is widely used in power management, motor drives, power amplifiers, and power conversion, where efficient energy transfer and low power consumption are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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