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IRF1010NL-VB Product details
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IRF1010NL-VB Product Introduction
The IRF1010NL-VB is a single N-channel MOSFET in a TO262 package, designed for high current applications. This MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, which enables it to perform well in a variety of power management and power switching applications. Using advanced Trench technology, the IRF1010NL-VB has a very low on-resistance (RDS(ON)) of 3mΩ at a gate drive voltage of 10V and can handle drain currents up to 210A. Its excellent electrical performance enables it to excel in applications requiring high efficiency and high current.
The IRF1010NL-VB is a single N-channel MOSFET in a TO262 package, designed for high current applications. This MOSFET has a drain-source voltage (VDS) of 60V and a gate-source voltage (VGS) of ±20V, which enables it to perform well in a variety of power management and power switching applications. Using advanced Trench technology, the IRF1010NL-VB has a very low on-resistance (RDS(ON)) of 3mΩ at a gate drive voltage of 10V and can handle drain currents up to 210A. Its excellent electrical performance enables it to excel in applications requiring high efficiency and high current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
IRF1010NL-VB Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench
- **Maximum power dissipation**: Depends on heat dissipation conditions and actual design
- **Operating temperature range**: Typically -55°C to +150°C (specific data please refer to the data sheet)
- **Package type**: TO262
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 3mΩ @ VGS=10V
- **Drain current (ID)**: 210A
- **Technology**: Trench
- **Maximum power dissipation**: Depends on heat dissipation conditions and actual design
- **Operating temperature range**: Typically -55°C to +150°C (specific data please refer to the data sheet)
Domain and module applications：
Applications and module examples
1. **High-power power management**
The low RDS(ON) and high current capability of the IRF1010NL-VB make it ideal for high-power power management systems, such as high-power DC-DC converters and power distribution modules. This MOSFET can effectively reduce power losses and improve the overall efficiency of the system.
2. **Electric vehicle (EV) drive system**
In the battery management and motor drive systems of electric vehicles, the IRF1010NL-VB is able to handle high currents and provide stable performance. Its high current carrying capacity and low on-resistance make it suitable for high-power switching and drive applications in electric vehicles.
3. **Industrial power and control systems**
The high withstand voltage and high current capability of the IRF1010NL-VB make it suitable for a variety of industrial power and control systems, including inverters and high-power load switches. Its excellent electrical performance can improve the stability and reliability of the system.
4. **Server and Data Center Power Supplies**
In power management systems for servers and data centers, the IRF1010NL-VB is able to provide efficient power conversion and switching functions. Due to its low on-resistance and high current capability, this MOSFET can help reduce energy consumption and improve the overall performance of the power module.
In general, the IRF1010NL-VB is suitable for applications requiring high power, high efficiency, and high current handling due to its excellent current handling capability and low power consumption.
1. **High-power power management**
The low RDS(ON) and high current capability of the IRF1010NL-VB make it ideal for high-power power management systems, such as high-power DC-DC converters and power distribution modules. This MOSFET can effectively reduce power losses and improve the overall efficiency of the system.
2. **Electric vehicle (EV) drive system**
In the battery management and motor drive systems of electric vehicles, the IRF1010NL-VB is able to handle high currents and provide stable performance. Its high current carrying capacity and low on-resistance make it suitable for high-power switching and drive applications in electric vehicles.
3. **Industrial power and control systems**
The high withstand voltage and high current capability of the IRF1010NL-VB make it suitable for a variety of industrial power and control systems, including inverters and high-power load switches. Its excellent electrical performance can improve the stability and reliability of the system.
4. **Server and Data Center Power Supplies**
In power management systems for servers and data centers, the IRF1010NL-VB is able to provide efficient power conversion and switching functions. Due to its low on-resistance and high current capability, this MOSFET can help reduce energy consumption and improve the overall performance of the power module.
In general, the IRF1010NL-VB is suitable for applications requiring high power, high efficiency, and high current handling due to its excellent current handling capability and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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