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IRF1010NLPBF-VB Product details
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1. Product Introduction
IRF1010NLPBF-VB is a single N-channel MOSFET in TO262 package, known for its excellent performance and high current handling capability. With a maximum drain-source voltage (VDS) of 60V, this MOSFET can operate stably in a high voltage environment. Its threshold voltage (Vth) is 3.5V, which allows the MOSFET to be turned on at a lower gate-source voltage. Using advanced Trench technology, the IRF1010NLPBF-VB has an extremely low on-resistance (RDS(ON) is 3mΩ@VGS=10V), which enables it to maintain efficient current transmission under high current conditions. With a maximum drain current (ID) of up to 210A, it is suitable for applications requiring high current carrying capacity.
IRF1010NLPBF-VB is a single N-channel MOSFET in TO262 package, known for its excellent performance and high current handling capability. With a maximum drain-source voltage (VDS) of 60V, this MOSFET can operate stably in a high voltage environment. Its threshold voltage (Vth) is 3.5V, which allows the MOSFET to be turned on at a lower gate-source voltage. Using advanced Trench technology, the IRF1010NLPBF-VB has an extremely low on-resistance (RDS(ON) is 3mΩ@VGS=10V), which enables it to maintain efficient current transmission under high current conditions. With a maximum drain current (ID) of up to 210A, it is suitable for applications requiring high current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | 3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 3.5V | 210A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
2. Detailed parameter description
- **Package type**: TO262
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance RDS(ON)**: 3mΩ @ VGS=10V
- **Maximum drain current (ID)**: 210A
- **Technology type**: Trench
- **Operating temperature range**: Typically -55°C to 150°C (please refer to the data sheet for details)
- **Package type**: TO262
- **Configuration**: Single-N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance RDS(ON)**: 3mΩ @ VGS=10V
- **Maximum drain current (ID)**: 210A
- **Technology type**: Trench
- **Operating temperature range**: Typically -55°C to 150°C (please refer to the data sheet for details)
Domain and module applications：
3. Application fields and modules
The high current and low on-resistance characteristics of the IRF1010NLPBF-VB MOSFET make it suitable for a variety of high-performance, high-current application scenarios. The following are several typical application fields and modules:
1. **High-power power management**:
Due to its drain current capability of up to 210A, the IRF1010NLPBF-VB is very suitable for high-power power management systems such as server power supplies and large industrial power supplies. Its low on-resistance can significantly reduce power losses and improve the overall efficiency of the system.
2. **Electric Vehicles (EV)**:
In the motor drive and battery management system of electric vehicles, this MOSFET can handle high current demands and provide reliable switching performance. Its low RDS(ON) value helps to improve the energy efficiency of electric vehicle drive systems.
3. **Motor Drive and Control**:
The IRF1010NLPBF-VB is suitable for motor drive applications that require high current, such as industrial motor drives and high-power power tools. Its excellent conduction performance ensures smooth operation and high-efficiency energy transmission of the motor.
4. **High-efficiency DC-DC Converter**:
In high-efficiency DC-DC converters, the low on-resistance and high current capability of this MOSFET can significantly improve conversion efficiency, especially in scenarios with high current output and low voltage input, which can effectively reduce conversion losses.
The high current handling capability and extremely low on-resistance of the IRF1010NLPBF-VB enable it to perform well in a variety of applications that require high power and high efficiency, and is an ideal choice for modern power supply design and high-current switching applications.
The high current and low on-resistance characteristics of the IRF1010NLPBF-VB MOSFET make it suitable for a variety of high-performance, high-current application scenarios. The following are several typical application fields and modules:
1. **High-power power management**:
Due to its drain current capability of up to 210A, the IRF1010NLPBF-VB is very suitable for high-power power management systems such as server power supplies and large industrial power supplies. Its low on-resistance can significantly reduce power losses and improve the overall efficiency of the system.
2. **Electric Vehicles (EV)**:
In the motor drive and battery management system of electric vehicles, this MOSFET can handle high current demands and provide reliable switching performance. Its low RDS(ON) value helps to improve the energy efficiency of electric vehicle drive systems.
3. **Motor Drive and Control**:
The IRF1010NLPBF-VB is suitable for motor drive applications that require high current, such as industrial motor drives and high-power power tools. Its excellent conduction performance ensures smooth operation and high-efficiency energy transmission of the motor.
4. **High-efficiency DC-DC Converter**:
In high-efficiency DC-DC converters, the low on-resistance and high current capability of this MOSFET can significantly improve conversion efficiency, especially in scenarios with high current output and low voltage input, which can effectively reduce conversion losses.
The high current handling capability and extremely low on-resistance of the IRF1010NLPBF-VB enable it to perform well in a variety of applications that require high power and high efficiency, and is an ideal choice for modern power supply design and high-current switching applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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