中文
English
IRF1010EZSPBF-VB Product details
Back to previous pageProduct introduction：
IRF1010EZSPBF-VB MOSFET Product Introduction
IRF1010EZSPBF-VB is a single N-channel MOSFET with a TO263 package type. This MOSFET has high current carrying capacity and low on-resistance, suitable for high-power applications. Its maximum drain-source voltage (VDS) reaches 60V, and the gate-source voltage (VGS) can withstand a range of ±20V, ensuring good switching performance and stability. The turn-on voltage (Vth) of IRF1010EZSPBF-VB is 3V, and the on-resistance (RDS(ON)) is as low as 4mΩ (at VGS=10V), which makes it perform well in high-current operation. Using Trench technology, it can provide efficient energy transfer and low power consumption, and is widely used in various high-current, high-power electronic devices.
IRF1010EZSPBF-VB is a single N-channel MOSFET with a TO263 package type. This MOSFET has high current carrying capacity and low on-resistance, suitable for high-power applications. Its maximum drain-source voltage (VDS) reaches 60V, and the gate-source voltage (VGS) can withstand a range of ±20V, ensuring good switching performance and stability. The turn-on voltage (Vth) of IRF1010EZSPBF-VB is 3V, and the on-resistance (RDS(ON)) is as low as 4mΩ (at VGS=10V), which makes it perform well in high-current operation. Using Trench technology, it can provide efficient energy transfer and low power consumption, and is widely used in various high-current, high-power electronic devices.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | 4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IRF1010EZSPBF-VB MOSFET Detailed parameter description
- **Package type**: TO263
- **Device type**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V (typical)
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Power consumption**: High power handling capability, suitable for high current applications
- **Package characteristics**: TO263 package provides excellent heat dissipation performance and high power density
- **Package type**: TO263
- **Device type**: Single N-channel MOSFET
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Throughput voltage (Vth)**: 3V (typical)
- **On-resistance (RDS(ON))**: 4mΩ @ VGS=10V
- **Continuous drain current (ID)**: 150A
- **Technology**: Trench technology
- **Power consumption**: High power handling capability, suitable for high current applications
- **Package characteristics**: TO263 package provides excellent heat dissipation performance and high power density
Domain and module applications：
Application fields and module examples
1. **Power management system**: The low on-resistance and high current carrying capacity of IRF1010EZSPBF-VB make it ideal for use in efficient DC-DC converters and power adapters. In these applications, the high current handling capability and low power consumption characteristics of MOSFET can improve overall system efficiency and reduce power loss.
2. **Motor drive**: In motor control systems that require high current drive, IRF1010EZSPBF-VB can provide stable and reliable drive signals due to its high current capability and low on-resistance. This includes applications such as industrial motors, automotive motors, and fan drives, where the excellent performance of MOSFET can improve the operating efficiency and life of the motor.
3. **Power amplifier**: For high-power audio amplifiers and RF amplifiers, the high current capability and low on-resistance of IRF1010EZSPBF-VB make it an ideal choice. In these applications, the efficient energy transfer of MOSFET can improve the overall performance of the amplifier and reduce heat generation.
4. **Power Conversion and Inverters**: In solar inverters and other power electronic devices, the high current and low on-resistance characteristics of the IRF1010EZSPBF-VB make it suitable for high-power and high-efficiency power conversion tasks. The MOSFET is able to handle higher power loads, ensuring system stability and high efficiency.
The IRF1010EZSPBF-VB is a MOSFET with excellent high current handling capability and low power consumption. It is widely used in high-power and high-current application scenarios such as power management, motor drives, power amplifiers, and power conversion.
1. **Power management system**: The low on-resistance and high current carrying capacity of IRF1010EZSPBF-VB make it ideal for use in efficient DC-DC converters and power adapters. In these applications, the high current handling capability and low power consumption characteristics of MOSFET can improve overall system efficiency and reduce power loss.
2. **Motor drive**: In motor control systems that require high current drive, IRF1010EZSPBF-VB can provide stable and reliable drive signals due to its high current capability and low on-resistance. This includes applications such as industrial motors, automotive motors, and fan drives, where the excellent performance of MOSFET can improve the operating efficiency and life of the motor.
3. **Power amplifier**: For high-power audio amplifiers and RF amplifiers, the high current capability and low on-resistance of IRF1010EZSPBF-VB make it an ideal choice. In these applications, the efficient energy transfer of MOSFET can improve the overall performance of the amplifier and reduce heat generation.
4. **Power Conversion and Inverters**: In solar inverters and other power electronic devices, the high current and low on-resistance characteristics of the IRF1010EZSPBF-VB make it suitable for high-power and high-efficiency power conversion tasks. The MOSFET is able to handle higher power loads, ensuring system stability and high efficiency.
The IRF1010EZSPBF-VB is a MOSFET with excellent high current handling capability and low power consumption. It is widely used in high-power and high-current application scenarios such as power management, motor drives, power amplifiers, and power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
