中文
English
IRF1010EZL-VB Product details
Back to previous pageProduct introduction：
IRF1010EZL-VB Product Introduction
**IRF1010EZL-VB** is a high current, high conduction capability N-channel MOSFET packaged in TO262. Using Trench technology, this MOSFET provides extremely low on-resistance while supporting up to 120A of drain current, suitable for high-power switching and power management applications. Its low on-resistance and wide voltage tolerance make it perform well in a variety of high-performance electronic devices.
**IRF1010EZL-VB** is a high current, high conduction capability N-channel MOSFET packaged in TO262. Using Trench technology, this MOSFET provides extremely low on-resistance while supporting up to 120A of drain current, suitable for high-power switching and power management applications. Its low on-resistance and wide voltage tolerance make it perform well in a variety of high-performance electronic devices.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | 6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 60V | 2.5V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
Detailed parameter description
- **Model**: IRF1010EZL-VB
- **Package**: TO262
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ (VGS=10V)
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
- **Model**: IRF1010EZL-VB
- **Package**: TO262
- **Configuration**: Unipolar N-channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**: 6mΩ (VGS=10V)
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench
Domain and module applications：
Applications and module examples
**1. High power switch **
The IRF1010EZL-VB is ideally suited for high power switch applications such as power switches and power converters due to its extremely low on-resistance and high current carrying capability. Its high current capability enables it to handle high power loads, thus improving the efficiency and stability of the system.
**2. Electric vehicle drive **
In electric vehicles, this MOSFET can be used as a switching element in motor drives and battery management systems. Its high current handling capability and low on-resistance help improve the efficiency and performance of electric vehicle systems, ensuring reliable operation of motors and batteries.
**3. DC-DC converter **
In DC-DC converter applications, the low on-resistance and high current capability of the IRF1010EZL-VB make it suitable for efficient power conversion. Its excellent switching performance ensures low energy loss and high efficiency during the conversion process, allowing the converter to operate stably in a variety of applications.
**4. Computer Power Supply**
This MOSFET is also very suitable for switch and protection circuits in computer power supply systems. Its high current handling capability and low on-resistance can improve the overall performance and stability of the power supply and meet the high power requirements of computer systems.
These application examples show the wide applicability of IRF1010EZL-VB in high power and high current applications, especially in scenarios that require efficient energy management and low energy loss.
**1. High power switch **
The IRF1010EZL-VB is ideally suited for high power switch applications such as power switches and power converters due to its extremely low on-resistance and high current carrying capability. Its high current capability enables it to handle high power loads, thus improving the efficiency and stability of the system.
**2. Electric vehicle drive **
In electric vehicles, this MOSFET can be used as a switching element in motor drives and battery management systems. Its high current handling capability and low on-resistance help improve the efficiency and performance of electric vehicle systems, ensuring reliable operation of motors and batteries.
**3. DC-DC converter **
In DC-DC converter applications, the low on-resistance and high current capability of the IRF1010EZL-VB make it suitable for efficient power conversion. Its excellent switching performance ensures low energy loss and high efficiency during the conversion process, allowing the converter to operate stably in a variety of applications.
**4. Computer Power Supply**
This MOSFET is also very suitable for switch and protection circuits in computer power supply systems. Its high current handling capability and low on-resistance can improve the overall performance and stability of the power supply and meet the high power requirements of computer systems.
These application examples show the wide applicability of IRF1010EZL-VB in high power and high current applications, especially in scenarios that require efficient energy management and low energy loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
