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IR9351-VB Product details

Product introduction:

1. IR9351-VB Product Introduction

IR9351-VB is a dual P-channel MOSFET in DFN6(2X2)-B package with low on-resistance and efficient switching performance. The device has a maximum drain-source voltage (VDS) of -30V and a maximum gate-source voltage (VGS) of ±12V, suitable for low-voltage power conversion applications. It is manufactured based on advanced trench technology, has efficient turn-on and turn-off performance, and can significantly reduce conduction losses. The design of its two sets of P-channel MOSFETs is suitable for circuits that require bidirectional current control, which helps to simplify system design and improve power density.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN6(2X2)-B Dual-P+P -30V -1.7V -5.4A 38mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN6(2X2)-B Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN6(2X2)-B Dual-P+P -30V -1.7V -5.4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN6(2X2)-B Dual-P+P -30V -1.7V -5.4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN6(2X2)-B Dual-P+P
2. IR9351-VB parameter description

- **Package**: DFN6(2X2)-B
- **Configuration**: Dual P+P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: 12V (Max ±V)
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 60mΩ @ VGS=4.5V
- 38mΩ @ VGS=10V
- **Maximum drain current (ID)**: -5.4A
- **Technology**: Trench

Domain and module applications:

III. Application fields and modules

1. **Power management module**: IR9351-VB is suitable for low voltage power conversion applications, especially in power management modules such as DC-DC converters and load switches. Its dual P-channel configuration simplifies the design of reverse protection circuits while reducing power loss.

2. **Consumer electronic devices**: In portable devices such as mobile phones and tablets, IR9351-VB can be used for battery management and power switching circuits. Its low on-resistance characteristics can effectively improve the energy efficiency of the device and extend battery life.

3. **Automotive electronic systems**: In the on-board low voltage power management and sensor circuits, this dual P-channel MOSFET can be used to drive motors, control lights and other electronic devices, providing efficient power switching capabilities while ensuring the stability and reliability of the on-board circuits.

4. **Industrial Automation and Control Systems**: IR9351-VB can also be applied to low-power power modules in industrial automation equipment, such as robot power management and motor drive circuits, where its durability and reliability are suitable for high-frequency switching scenarios.

Through the above features and application scenarios, IR9351-VB provides a good balance of performance and efficiency, making it very suitable for various modules and fields that require low-voltage power control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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