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IPW90R1K2C3-VB Product details
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1. IPW90R1K2C3-VB Product Introduction
IPW90R1K2C3-VB is a high-voltage, high-power N-channel MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage is 900V and drain current is 9A, which is suitable for handling high-power and high-voltage power management tasks. This MOSFET adopts SJ_Multi-EPI (Super Junction Multi-Epi) technology, which not only improves the voltage tolerance, but also optimizes the conductive performance, so that it has good efficiency and reliability in high-power applications.
IPW90R1K2C3-VB is a high-voltage, high-power N-channel MOSFET in TO247 package, designed for high-voltage applications. Its maximum drain-source voltage is 900V and drain current is 9A, which is suitable for handling high-power and high-voltage power management tasks. This MOSFET adopts SJ_Multi-EPI (Super Junction Multi-Epi) technology, which not only improves the voltage tolerance, but also optimizes the conductive performance, so that it has good efficiency and reliability in high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | 750mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 900V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS = 10V
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epitaxial Technology)
- **Operating temperature range**: -55°C to 150°C
- **Power consumption (Ptot)**: 75W (at 25°C)
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS = 10V
- **Drain current (ID)**: 9A
- **Technology**: SJ_Multi-EPI (Super Junction Multi-Epitaxial Technology)
- **Operating temperature range**: -55°C to 150°C
- **Power consumption (Ptot)**: 75W (at 25°C)
Domain and module applications：
3. Application fields and module examples
1. **High-voltage switching power supply (SMPS)**: IPW90R1K2C3-VB is suitable for switching power supply systems that need to handle high voltages, such as high-voltage DC-DC converters. Its high voltage tolerance of 900V and low on-resistance enable it to efficiently convert power, reduce energy loss, and improve system efficiency.
2. **Industrial power management**: In industrial power management and motor drive systems, this MOSFET provides high voltage and high current control capabilities. It can operate stably in high voltage environments and effectively manage current to provide reliable power solutions for industrial equipment.
3. **High-voltage inverter**: In high-voltage inverter systems such as solar and wind inverters, IPW90R1K2C3-VB can handle 900V high voltage requirements and ensure efficient conversion from DC to AC. It helps to improve system stability and conversion efficiency and support the effective use of renewable energy.
4. **Power Factor Correction (PFC)**: In power factor correction applications, IPW90R1K2C3-VB can efficiently manage high voltage loads, improve power factor and reduce power loss. Its excellent performance makes it play a key role in PFC modules that require high voltage and high power processing.
These application examples show the importance of IPW90R1K2C3-VB in handling high voltage and high power applications. Its excellent performance and reliability make it an ideal choice in power management, motor drive, high voltage inverter and power factor correction.
1. **High-voltage switching power supply (SMPS)**: IPW90R1K2C3-VB is suitable for switching power supply systems that need to handle high voltages, such as high-voltage DC-DC converters. Its high voltage tolerance of 900V and low on-resistance enable it to efficiently convert power, reduce energy loss, and improve system efficiency.
2. **Industrial power management**: In industrial power management and motor drive systems, this MOSFET provides high voltage and high current control capabilities. It can operate stably in high voltage environments and effectively manage current to provide reliable power solutions for industrial equipment.
3. **High-voltage inverter**: In high-voltage inverter systems such as solar and wind inverters, IPW90R1K2C3-VB can handle 900V high voltage requirements and ensure efficient conversion from DC to AC. It helps to improve system stability and conversion efficiency and support the effective use of renewable energy.
4. **Power Factor Correction (PFC)**: In power factor correction applications, IPW90R1K2C3-VB can efficiently manage high voltage loads, improve power factor and reduce power loss. Its excellent performance makes it play a key role in PFC modules that require high voltage and high power processing.
These application examples show the importance of IPW90R1K2C3-VB in handling high voltage and high power applications. Its excellent performance and reliability make it an ideal choice in power management, motor drive, high voltage inverter and power factor correction.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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