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IPW90R1K0C3-VB Product details

Product introduction:

IPW90R1K0C3-VB Product Introduction
IPW90R1K0C3-VB is a high voltage N-channel MOSFET in TO247 package. Designed for high voltage, high power applications, this MOSFET has a drain-source voltage (VDS) of 900V and a gate-source voltage (VGS) of 30V. Its on-resistance is 750mΩ (at VGS=10V) and its maximum drain current is 9A. IPW90R1K0C3-VB utilizes SJ (super junction) multi-epitaxial technology (SJ_Multi-EPI), which is able to provide reliable performance and low power loss under high voltage and high power conditions. This makes it ideal for use in important applications that require high voltage tolerance and stability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 900V 3.5V 9A 750mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
IPW90R1K0C3-VB Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI super junction multi-epitaxial technology
- **Other features**:
- High voltage tolerance, suitable for high voltage applications
- Lower on-resistance, reduced power loss
- High current handling capability, suitable for high power applications
- Excellent thermal performance and high switching efficiency

Domain and module applications:

Application fields and module examples
1. **High-voltage power converter**: IPW90R1K0C3-VB is suitable for high-voltage power converters, such as high-voltage DC-DC converters and AC-DC converters. Its 900V drain-source voltage allows it to handle high-voltage inputs, while its low on-resistance effectively reduces energy loss and improves conversion efficiency.

2. **Industrial power module**: In industrial power modules, such as power conditioners and high-voltage switches, this MOSFET can stably handle large currents and high voltages, provide reliable switching performance and efficient power management, and ensure stable operation of industrial equipment under high-power conditions.

3. **Electric vehicle battery management system**: IPW90R1K0C3-VB is also suitable for battery management systems in electric vehicles. Its high voltage capability enables it to handle the switching and protection of high-voltage battery packs, while its low on-resistance ensures high efficiency and low energy loss during battery charging and discharging.

4. **Power Inverter**: In solar or wind power inverters, this MOSFET can be used for inversion and conversion of high voltage power. Its 900V withstand voltage capability and excellent thermal management performance enable it to maintain efficient operation in extreme environments, suitable for power conversion modules in large-scale renewable energy systems.

IPW90R1K0C3-VB is widely used in various critical applications in high voltage and high power environments with its excellent high voltage withstand capability and efficient current handling performance, ensuring system reliability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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