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IPW65R660CFD-VB Product details
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1. IPW65R660CFD-VB Product Introduction
IPW65R660CFD-VB is a high voltage N-type power MOSFET in TO247 package, designed for high voltage and medium current applications. This MOSFET supports a maximum drain-source voltage (V_DS) of 700V and a drain current (I_D) of 11A, suitable for applications requiring higher voltage tolerance. Its on-resistance is 450mΩ@V_GS=10V, which enables it to effectively control power consumption under medium current conditions. The device uses SJ_Multi-EPI technology to optimize switching performance and thermal management, enhancing the reliability and durability of the device. The TO247 package provides good heat dissipation performance, enabling it to work stably in a high power environment. IPW65R660CFD-VB performs well in high voltage power supplies, industrial control, and some special power conversion applications.
IPW65R660CFD-VB is a high voltage N-type power MOSFET in TO247 package, designed for high voltage and medium current applications. This MOSFET supports a maximum drain-source voltage (V_DS) of 700V and a drain current (I_D) of 11A, suitable for applications requiring higher voltage tolerance. Its on-resistance is 450mΩ@V_GS=10V, which enables it to effectively control power consumption under medium current conditions. The device uses SJ_Multi-EPI technology to optimize switching performance and thermal management, enhancing the reliability and durability of the device. The TO247 package provides good heat dissipation performance, enabling it to work stably in a high power environment. IPW65R660CFD-VB performs well in high voltage power supplies, industrial control, and some special power conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 11A | 450mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description of IPW65R660CFD-VB
- **Model**: IPW65R660CFD-VB
- **Package type**: TO247
- **Configuration**: Single channel N-type
- **Drain-source voltage (V_DS)**: 700V
- **Gate-source voltage (V_GS)**: 30V (±)
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 450mΩ @ V_GS=10V
- **Drain current (I_D)**: 11A
- **Technology process**: SJ_Multi-EPI
**Parameter details**:
1. **Package type (TO247)**: TO247 The package provides excellent heat dissipation and mechanical strength for high power applications.
2. **Single-channel N-type design**: Single-channel N-type MOSFET designed for high voltage and medium current switching requirements.
3. **Drain-source voltage (V_DS = 700V)**: Able to withstand high voltages, making it suitable for high voltage power supplies and inverter applications.
4. **Gate-source voltage (V_GS = 30V)**: Wide gate-source voltage range, providing flexible drive options.
5. **Threshold voltage (V_th = 3.5V)**: Medium threshold voltage ensures reliable turn-on of the device under different operating conditions.
6. **On-resistance (R_DS(ON) = 450mΩ @ V_GS=10V)**: Higher on-resistance, suitable for medium power applications, but will result in certain power losses.
7. **Drain current (I_D = 11A)**: Suitable for medium current applications.
8. **Technology (SJ_Multi-EPI)**: SJ_Multi-EPI technology improves the switching performance and thermal management capabilities of MOSFET.
- **Model**: IPW65R660CFD-VB
- **Package type**: TO247
- **Configuration**: Single channel N-type
- **Drain-source voltage (V_DS)**: 700V
- **Gate-source voltage (V_GS)**: 30V (±)
- **Threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(ON))**: 450mΩ @ V_GS=10V
- **Drain current (I_D)**: 11A
- **Technology process**: SJ_Multi-EPI
**Parameter details**:
1. **Package type (TO247)**: TO247 The package provides excellent heat dissipation and mechanical strength for high power applications.
2. **Single-channel N-type design**: Single-channel N-type MOSFET designed for high voltage and medium current switching requirements.
3. **Drain-source voltage (V_DS = 700V)**: Able to withstand high voltages, making it suitable for high voltage power supplies and inverter applications.
4. **Gate-source voltage (V_GS = 30V)**: Wide gate-source voltage range, providing flexible drive options.
5. **Threshold voltage (V_th = 3.5V)**: Medium threshold voltage ensures reliable turn-on of the device under different operating conditions.
6. **On-resistance (R_DS(ON) = 450mΩ @ V_GS=10V)**: Higher on-resistance, suitable for medium power applications, but will result in certain power losses.
7. **Drain current (I_D = 11A)**: Suitable for medium current applications.
8. **Technology (SJ_Multi-EPI)**: SJ_Multi-EPI technology improves the switching performance and thermal management capabilities of MOSFET.
Domain and module applications：
3. Application fields and module examples of IPW65R660CFD-VB
1. **Power management**: IPW65R660CFD-VB can be used in high voltage power converters and switching power supplies (SMPS), especially in application scenarios that need to handle high voltage but have low current requirements. Its high voltage capability makes it suitable for high voltage DC power conversion and regulator applications.
2. **Industrial control**: In industrial control systems, such as high voltage motor drives and automation equipment, IPW65R660CFD-VB is a switching component that can handle high voltage power, while its medium current capability is suitable for medium power industrial equipment control.
3. **Electric vehicles**: In high voltage battery management systems (BMS) and high voltage DC-DC converters in electric vehicles, this MOSFET can be used for high voltage control and protection circuits. It is suitable for battery charging and power conversion modules. Although the on-resistance is high, it can meet the design requirements in specific applications.
4. **Lighting Control**: In high-power LED lighting control systems, the IPW65R660CFD-VB can be used in high-voltage switching power modules. This is suitable for LED drivers that require high voltage but medium current, which helps efficient power management and reduces system power consumption.
5. **Power Inverter**: In high-voltage inverter applications, such as solar inverters or other high-power inverters, the IPW65R660CFD-VB can be used for high-voltage switching to ensure stable power conversion and system reliability.
Although the on-resistance of the IPW65R660CFD-VB is relatively high, its high voltage tolerance and moderate current capability make it perform well in specific applications, especially in environments where high voltage control is required.
1. **Power management**: IPW65R660CFD-VB can be used in high voltage power converters and switching power supplies (SMPS), especially in application scenarios that need to handle high voltage but have low current requirements. Its high voltage capability makes it suitable for high voltage DC power conversion and regulator applications.
2. **Industrial control**: In industrial control systems, such as high voltage motor drives and automation equipment, IPW65R660CFD-VB is a switching component that can handle high voltage power, while its medium current capability is suitable for medium power industrial equipment control.
3. **Electric vehicles**: In high voltage battery management systems (BMS) and high voltage DC-DC converters in electric vehicles, this MOSFET can be used for high voltage control and protection circuits. It is suitable for battery charging and power conversion modules. Although the on-resistance is high, it can meet the design requirements in specific applications.
4. **Lighting Control**: In high-power LED lighting control systems, the IPW65R660CFD-VB can be used in high-voltage switching power modules. This is suitable for LED drivers that require high voltage but medium current, which helps efficient power management and reduces system power consumption.
5. **Power Inverter**: In high-voltage inverter applications, such as solar inverters or other high-power inverters, the IPW65R660CFD-VB can be used for high-voltage switching to ensure stable power conversion and system reliability.
Although the on-resistance of the IPW65R660CFD-VB is relatively high, its high voltage tolerance and moderate current capability make it perform well in specific applications, especially in environments where high voltage control is required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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