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IPW65R310CFD-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
IPW65R310CFD-VB is a high-voltage N-channel MOSFET in TO247 package, designed for high voltage and high power applications. This MOSFET adopts SJ_Multi-EPI technology, with a drain-source voltage (VDS) of 700V and a drain current (ID) of 20A, ensuring stable operation under high load conditions. Its on-resistance (RDS(ON)) at VGS=10V is 210mΩ, which is suitable for application scenarios requiring medium on-resistance and high withstand voltage. The gate-source voltage (VGS) range is ±30V, providing a wide range of control voltage adaptability. IPW65R310CFD-VB is suitable for high-voltage switching power supplies, industrial power modules, and high-voltage switches and power converters in high-power applications.
IPW65R310CFD-VB is a high-voltage N-channel MOSFET in TO247 package, designed for high voltage and high power applications. This MOSFET adopts SJ_Multi-EPI technology, with a drain-source voltage (VDS) of 700V and a drain current (ID) of 20A, ensuring stable operation under high load conditions. Its on-resistance (RDS(ON)) at VGS=10V is 210mΩ, which is suitable for application scenarios requiring medium on-resistance and high withstand voltage. The gate-source voltage (VGS) range is ±30V, providing a wide range of control voltage adaptability. IPW65R310CFD-VB is suitable for high-voltage switching power supplies, industrial power modules, and high-voltage switches and power converters in high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 20A | 210mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. Detailed parameter description:
1. **Package type**: TO247
2. **Channel type**: Single N-channel
3. **VDS (drain-source voltage)**: 700V
4. **VGS (gate-source voltage)**: ±30V
5. **Vth (threshold voltage)**: 3.5V
6. **RDS(ON) (on-resistance)**: 210mΩ @ VGS = 10V
7. **ID (drain current)**: 20A
8. **Technology**: SJ_Multi-EPI technology
9. **Qg (total gate charge)**: 250nC
10. **Thermal resistance**: Rth(jc) = 0.62°C/W
11. **Turn-on delay time**: 120ns
12. **Rise time**: 150 ns
13. **Turn-off delay time**: 100 ns
14. **Fall time**: 90 ns
15. **Operating temperature range**: -55°C to 150°C
16. **Ptot (maximum power consumption)**: 250W
1. **Package type**: TO247
2. **Channel type**: Single N-channel
3. **VDS (drain-source voltage)**: 700V
4. **VGS (gate-source voltage)**: ±30V
5. **Vth (threshold voltage)**: 3.5V
6. **RDS(ON) (on-resistance)**: 210mΩ @ VGS = 10V
7. **ID (drain current)**: 20A
8. **Technology**: SJ_Multi-EPI technology
9. **Qg (total gate charge)**: 250nC
10. **Thermal resistance**: Rth(jc) = 0.62°C/W
11. **Turn-on delay time**: 120ns
12. **Rise time**: 150 ns
13. **Turn-off delay time**: 100 ns
14. **Fall time**: 90 ns
15. **Operating temperature range**: -55°C to 150°C
16. **Ptot (maximum power consumption)**: 250W
Domain and module applications：
3. Application fields and module examples:
1. **High-voltage switching power supply**: IPW65R310CFD-VB is suitable for the switch control part of high-voltage switching power supply. Its high drain-source voltage of 700V and moderate on-resistance enable it to operate efficiently under high-voltage input conditions and provide reliable power conversion performance.
2. **Industrial power management system**: In industrial power management modules, this MOSFET can handle high voltage and medium current requirements, and is suitable for switching and controlling high-voltage power supplies to ensure system stability and efficiency.
3. **Photovoltaic inverter**: Used in photovoltaic inverters, IPW65R310CFD-VB can efficiently handle the high voltage output of photovoltaic panels and convert DC power into AC power. Its high voltage resistance and reliable switching performance improve the overall efficiency and stability of the inverter.
4. **Electric vehicle charging equipment**: In electric vehicle charging equipment, IPW65R310CFD-VB can be used in high-voltage conversion modules, which is suitable for high-voltage control in fast charging piles and electric vehicle charging systems, ensuring efficient and safe charging.
5. **High-voltage power amplifier**: In high-voltage power amplifier applications, this MOSFET can handle high-voltage signals, suitable for RF power amplification and signal processing, providing low loss and efficient energy conversion.
6. **Motor driver**: IPW65R310CFD-VB is also suitable for high-power motor drives, providing high-voltage switching control to ensure efficient operation and precise control of the motor under high load conditions.
In short, IPW65R310CFD-VB is a MOSFET suitable for high-voltage, high-power applications. It is widely used in high-voltage switching power supplies, inverters, electric vehicle charging equipment and other fields, providing reliable switching performance and efficient energy conversion.
1. **High-voltage switching power supply**: IPW65R310CFD-VB is suitable for the switch control part of high-voltage switching power supply. Its high drain-source voltage of 700V and moderate on-resistance enable it to operate efficiently under high-voltage input conditions and provide reliable power conversion performance.
2. **Industrial power management system**: In industrial power management modules, this MOSFET can handle high voltage and medium current requirements, and is suitable for switching and controlling high-voltage power supplies to ensure system stability and efficiency.
3. **Photovoltaic inverter**: Used in photovoltaic inverters, IPW65R310CFD-VB can efficiently handle the high voltage output of photovoltaic panels and convert DC power into AC power. Its high voltage resistance and reliable switching performance improve the overall efficiency and stability of the inverter.
4. **Electric vehicle charging equipment**: In electric vehicle charging equipment, IPW65R310CFD-VB can be used in high-voltage conversion modules, which is suitable for high-voltage control in fast charging piles and electric vehicle charging systems, ensuring efficient and safe charging.
5. **High-voltage power amplifier**: In high-voltage power amplifier applications, this MOSFET can handle high-voltage signals, suitable for RF power amplification and signal processing, providing low loss and efficient energy conversion.
6. **Motor driver**: IPW65R310CFD-VB is also suitable for high-power motor drives, providing high-voltage switching control to ensure efficient operation and precise control of the motor under high load conditions.
In short, IPW65R310CFD-VB is a MOSFET suitable for high-voltage, high-power applications. It is widely used in high-voltage switching power supplies, inverters, electric vehicle charging equipment and other fields, providing reliable switching performance and efficient energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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