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IPW65R280E6-VB Product details
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1. IPW65R280E6-VB Product Introduction
IPW65R280E6-VB is a high voltage single channel N-type MOSFET in TO247 package, designed for high power and high voltage applications. Its drain-source voltage (VDS) is as high as 700V, which can operate stably in a high voltage environment and is suitable for applications requiring high voltage isolation. The gate-source voltage (VGS) of this MOSFET is rated at ±30V, and the turn-on voltage (Vth) is 3.5V. The on-resistance (RDS(ON)) is 210mΩ (VGS=10V), and the maximum drain current (ID) is 20A. Using SJ_Multi-EPI technology, this MOSFET provides excellent switching performance and power density, and is suitable for power electronic systems requiring high voltage and higher current.
IPW65R280E6-VB is a high voltage single channel N-type MOSFET in TO247 package, designed for high power and high voltage applications. Its drain-source voltage (VDS) is as high as 700V, which can operate stably in a high voltage environment and is suitable for applications requiring high voltage isolation. The gate-source voltage (VGS) of this MOSFET is rated at ±30V, and the turn-on voltage (Vth) is 3.5V. The on-resistance (RDS(ON)) is 210mΩ (VGS=10V), and the maximum drain current (ID) is 20A. Using SJ_Multi-EPI technology, this MOSFET provides excellent switching performance and power density, and is suitable for power electronic systems requiring high voltage and higher current.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 20A | 210mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
II. Detailed parameter description of IPW65R280E6-VB
1. **Package type**: TO247
2. **Configuration**: Single-channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 700V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 210mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 20A
8. **Technology type**: SJ_Multi-EPI technology
9. **Operating temperature range**: -55°C to 150°C
10. **Thermal resistance**: Typical value 1.0°C/W (junction to case)
11. **Power dissipation**: 150W
12. **Switching speed**: Good switching performance, suitable for high-frequency applications
13. **Package size**: TO247 package, suitable for high-power heat dissipation and installation requirements
1. **Package type**: TO247
2. **Configuration**: Single-channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 700V
4. **Gate-source voltage (VGS)**: ±30V
5. **Throw-on voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**:
- 210mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 20A
8. **Technology type**: SJ_Multi-EPI technology
9. **Operating temperature range**: -55°C to 150°C
10. **Thermal resistance**: Typical value 1.0°C/W (junction to case)
11. **Power dissipation**: 150W
12. **Switching speed**: Good switching performance, suitable for high-frequency applications
13. **Package size**: TO247 package, suitable for high-power heat dissipation and installation requirements
Domain and module applications：
3. Application fields and module examples
1. **High-voltage switching power supply (SMPS)**: IPW65R280E6-VB performs well in high-voltage switching power supplies, especially in application scenarios that require high voltage processing. Its high voltage and moderate on-resistance ensure high efficiency and stability of the power supply, and is suitable for use in industrial power supplies, data center power supplies, and high-power power adapters.
2. **Solar inverter**: This MOSFET is also widely used in solar photovoltaic inverters. Its high voltage and moderate on-resistance enable it to efficiently handle the high voltage and current requirements in photovoltaic systems, improve the overall efficiency of the inverter, and is suitable for large-scale solar power plants and commercial photovoltaic systems.
3. **Electric vehicle charger**: IPW65R280E6-VB plays a significant role in electric vehicle chargers. Its high voltage tolerance and stable switching performance enable it to handle the high voltage requirements during charging, improve charging efficiency, and is suitable for fast chargers and high-power charging systems.
4. **High-voltage DC-DC converters**: In high-voltage DC-DC converters, this MOSFET provides efficient power conversion and stability, and is suitable for use in power electronic systems, such as communication base station power supplies and voltage conversion modules in industrial control systems. Its excellent switching performance helps reduce energy loss and improve system reliability.
5. **Uninterruptible Power Supply (UPS)**: IPW65R280E6-VB can be used in UPS systems to handle the needs of high-voltage power switching. Its reliable performance ensures smooth switching during power failures and is suitable for UPS equipment in industry, data centers and homes.
As a high-voltage, medium-current MOSFET, IPW65R280E6-VB is suitable for use in high-voltage switching power supplies, solar inverters, electric vehicle chargers, high-voltage DC-DC converters, and UPS systems. Its design based on SJ_Multi-EPI technology provides excellent switching performance and stability, which can meet the needs of various high-power density and high-efficiency applications.
1. **High-voltage switching power supply (SMPS)**: IPW65R280E6-VB performs well in high-voltage switching power supplies, especially in application scenarios that require high voltage processing. Its high voltage and moderate on-resistance ensure high efficiency and stability of the power supply, and is suitable for use in industrial power supplies, data center power supplies, and high-power power adapters.
2. **Solar inverter**: This MOSFET is also widely used in solar photovoltaic inverters. Its high voltage and moderate on-resistance enable it to efficiently handle the high voltage and current requirements in photovoltaic systems, improve the overall efficiency of the inverter, and is suitable for large-scale solar power plants and commercial photovoltaic systems.
3. **Electric vehicle charger**: IPW65R280E6-VB plays a significant role in electric vehicle chargers. Its high voltage tolerance and stable switching performance enable it to handle the high voltage requirements during charging, improve charging efficiency, and is suitable for fast chargers and high-power charging systems.
4. **High-voltage DC-DC converters**: In high-voltage DC-DC converters, this MOSFET provides efficient power conversion and stability, and is suitable for use in power electronic systems, such as communication base station power supplies and voltage conversion modules in industrial control systems. Its excellent switching performance helps reduce energy loss and improve system reliability.
5. **Uninterruptible Power Supply (UPS)**: IPW65R280E6-VB can be used in UPS systems to handle the needs of high-voltage power switching. Its reliable performance ensures smooth switching during power failures and is suitable for UPS equipment in industry, data centers and homes.
As a high-voltage, medium-current MOSFET, IPW65R280E6-VB is suitable for use in high-voltage switching power supplies, solar inverters, electric vehicle chargers, high-voltage DC-DC converters, and UPS systems. Its design based on SJ_Multi-EPI technology provides excellent switching performance and stability, which can meet the needs of various high-power density and high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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