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IPW65R190E6-VB Product details
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IPW65R190E6-VB is a high-performance single N-channel MOSFET in TO247 package, designed for high voltage and medium current applications. This MOSFET has a drain-source voltage (VDS) of 700V and a gate-source voltage (VGS) of ±30V, and adopts super junction (SJ) multi-layer epitaxial (Multi-EPI) technology. Its on-resistance is 210mΩ (at VGS of 10V) and the maximum drain current is 20A. This product provides excellent switching performance and low on-resistance in high voltage environments, making it suitable for various high-power power conversion and management applications with high efficiency and stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 20A | 210mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Package: TO247
Configuration: Single N-channel
Drain-source voltage (VDS): 700V
Gate-source voltage (VGS): ±30V
Threshold voltage (Vth): 3.5V
On-resistance (RDS(ON)): 210mΩ @ VGS = 10V
Drain current (ID): 20A
Technology: SJ_Multi-EPI
Switching performance: With good switching speed and low switching loss
Operating temperature range: -55°C to +150°C
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Domain and module applications：
High-voltage switch-mode power supplies (SMPS)
The IPW65R190E6-VB is widely used in high-voltage switch-mode power supplies (SMPS), including computer power supplies, server power supplies, and industrial power modules. Its high voltage withstand capability of 700V and low on-resistance of 210mΩ enable it to provide stable performance in high-efficiency power conversion and high-power handling applications, ensuring efficient power management and conversion.
Motor drive systems
In motor drive systems, especially in high-voltage electric vehicles, power tools, and industrial drive systems, the IPW65R190E6-VB is capable of handling higher currents and voltages. Its 20A drain current capability and excellent switching performance ensure high efficiency and stability of the motor drive system, optimizing the performance and power output of the motor.
Power inverters and power management
The MOSFET also performs well in power inverters and power management systems, such as solar inverters, wind power generation systems, and uninterruptible power supplies (UPS). Due to its 700V high voltage withstand capability and low on-resistance, it can effectively handle high voltage power conversion and improve system efficiency and reliability.
Power Electronics Control
IPW65R190E6-VB is suitable for various power electronic control modules, such as power regulators and load switches. Its high voltage and medium current characteristics make it very suitable for scenarios that require efficient switching and precise power control, ensuring the stability and long life of the equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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