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IPW65R190CFD-VB Product details
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1. IPW65R190CFD-VB Product Introduction
IPW65R190CFD-VB is a high-voltage single N-channel MOSFET in TO247 package. With a breakdown voltage of 650V and an on-resistance of 160mΩ, this MOSFET is suitable for applications that handle high voltage and high current. It uses super junction (SJ) and multi-epitaxial (Multi-EPI) technology to maintain efficient switching performance and low power loss in high-voltage environments. IPW65R190CFD-VB is suitable for high-efficiency power conversion, industrial power systems, and other fields that require high voltage and high current control.
IPW65R190CFD-VB is a high-voltage single N-channel MOSFET in TO247 package. With a breakdown voltage of 650V and an on-resistance of 160mΩ, this MOSFET is suitable for applications that handle high voltage and high current. It uses super junction (SJ) and multi-epitaxial (Multi-EPI) technology to maintain efficient switching performance and low power loss in high-voltage environments. IPW65R190CFD-VB is suitable for high-efficiency power conversion, industrial power systems, and other fields that require high voltage and high current control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | 160mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
2. Detailed parameter description of IPW65R190CFD-VB
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 650V
- **Gate drive voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: Superjunction (SJ) multi-epitaxial (Multi-EPI)
- **Power consumption (Ptot)**: 125W
- **Operating temperature range**: -55°C to +150°C
- **Switching speed**: Fast switching capability
- **Number of package pins**: 3 pins
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 650V
- **Gate drive voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 160mΩ @ VGS = 10V
- **Drain current (ID)**: 20A
- **Technology**: Superjunction (SJ) multi-epitaxial (Multi-EPI)
- **Power consumption (Ptot)**: 125W
- **Operating temperature range**: -55°C to +150°C
- **Switching speed**: Fast switching capability
- **Number of package pins**: 3 pins
Domain and module applications：
III. Applications and Modules
1. **Switching Power Supply (SMPS)**: IPW65R190CFD-VB excels in switching power supply applications. Its high breakdown voltage of 650V and on-resistance of 160mΩ make it suitable for high voltage power converters such as DC-DC converters and AC-DC converters, enabling efficient switching operations at high voltages and reducing power losses.
2. **Power Inverter**: In power inverter systems, this MOSFET can effectively handle high voltage input from a DC power source and perform an efficient inversion process. It is particularly suitable for solar inverters and industrial inverters, ensuring the stability and reliability of power conversion.
3. **Industrial Power Management**: IPW65R190CFD-VB is suitable for use in industrial power modules such as motor drive systems and power conversion devices. Its high voltage tolerance and low switching losses support stable operation and efficient control of high power applications.
4. **Uninterruptible Power Supply (UPS)**: In UPS systems, this MOSFET can efficiently handle the high voltage demand of power outages, ensuring reliable backup power for critical equipment when power fails and maintaining system stability.
5. **High-voltage Battery Management System (BMS)**: IPW65R190CFD-VB can also play a role in high-voltage battery management systems, especially in high-voltage control during battery charging and discharging. Its low on-resistance and high voltage tolerance help improve the efficiency and safety of battery management systems.
1. **Switching Power Supply (SMPS)**: IPW65R190CFD-VB excels in switching power supply applications. Its high breakdown voltage of 650V and on-resistance of 160mΩ make it suitable for high voltage power converters such as DC-DC converters and AC-DC converters, enabling efficient switching operations at high voltages and reducing power losses.
2. **Power Inverter**: In power inverter systems, this MOSFET can effectively handle high voltage input from a DC power source and perform an efficient inversion process. It is particularly suitable for solar inverters and industrial inverters, ensuring the stability and reliability of power conversion.
3. **Industrial Power Management**: IPW65R190CFD-VB is suitable for use in industrial power modules such as motor drive systems and power conversion devices. Its high voltage tolerance and low switching losses support stable operation and efficient control of high power applications.
4. **Uninterruptible Power Supply (UPS)**: In UPS systems, this MOSFET can efficiently handle the high voltage demand of power outages, ensuring reliable backup power for critical equipment when power fails and maintaining system stability.
5. **High-voltage Battery Management System (BMS)**: IPW65R190CFD-VB can also play a role in high-voltage battery management systems, especially in high-voltage control during battery charging and discharging. Its low on-resistance and high voltage tolerance help improve the efficiency and safety of battery management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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