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IPW65R110CFDA-VB Product details
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IPW65R110CFDA-VB Product Introduction
IPW65R110CFDA-VB is a high voltage N-channel MOSFET in TO247 package, designed for high voltage and high power applications. This MOSFET has a drain-source voltage (VDS) of 700V and a gate-source voltage (VGS) of 30V, suitable for use in high power conversion and management systems. Its on-resistance is 80mΩ (at VGS=10V), the drain current can reach 47A, and it adopts SJ (super junction) multi-epitaxial technology (SJ_Multi-EPI), which is designed to provide low power loss and high switching efficiency. IPW65R110CFDA-VB is suitable for applications requiring high voltage resistance and high current handling capabilities, ensuring reliability and efficiency under harsh conditions.
IPW65R110CFDA-VB is a high voltage N-channel MOSFET in TO247 package, designed for high voltage and high power applications. This MOSFET has a drain-source voltage (VDS) of 700V and a gate-source voltage (VGS) of 30V, suitable for use in high power conversion and management systems. Its on-resistance is 80mΩ (at VGS=10V), the drain current can reach 47A, and it adopts SJ (super junction) multi-epitaxial technology (SJ_Multi-EPI), which is designed to provide low power loss and high switching efficiency. IPW65R110CFDA-VB is suitable for applications requiring high voltage resistance and high current handling capabilities, ensuring reliability and efficiency under harsh conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 47A | 80mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 700V | 3.5V | 47A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
IPW65R110CFDA-VB Detailed parameter description
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology type**: SJ_Multi-EPI super junction multi-epitaxial technology
- **Other features**:
- High voltage tolerance, suitable for high voltage applications
- Low on-resistance, reduced power loss
- High current handling capability, suitable for high power environments
- Super junction technology provides higher switching efficiency and thermal performance
- **Package type**: TO247
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 700V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 80mΩ @ VGS=10V
- **Drain current (ID)**: 47A
- **Technology type**: SJ_Multi-EPI super junction multi-epitaxial technology
- **Other features**:
- High voltage tolerance, suitable for high voltage applications
- Low on-resistance, reduced power loss
- High current handling capability, suitable for high power environments
- Super junction technology provides higher switching efficiency and thermal performance
Domain and module applications：
Application fields and module examples
1. **High power inverter**: IPW65R110CFDA-VB is suitable for high power inverters, such as solar photovoltaic inverters and wind power inverters. The 700V drain-source voltage and 80mΩ on-resistance of this MOSFET enable it to effectively handle high voltage and high current, ensuring high efficiency and stability of the inverter in high power conversion.
2. **Industrial power**: In industrial power systems, such as AC-DC power converters or DC-DC converters, IPW65R110CFDA-VB provides efficient current management and low power loss. Its high withstand voltage and low on-resistance make it very suitable for high power power modules, improving the efficiency and reliability of the overall system.
3. **Electric vehicle charger**: In the charger of electric vehicles, this MOSFET is able to handle the high voltage and high current charging process. Its 700V withstand voltage capability and 80mΩ low on-resistance ensure the efficiency and safety of the charger in high power charging operations.
4. **Power Switching System**: IPW65R110CFDA-VB is suitable for various power switching systems, such as uninterruptible power supply (UPS) and motor drive systems. Its high current handling capability and high withstand voltage characteristics enable it to stably handle high power switching tasks and improve system reliability and performance.
Through its high voltage withstand capability and efficient switching performance, IPW65R110CFDA-VB performs well in multiple high power application fields, meeting the needs of modern high power electronic equipment for efficiency and stability.
1. **High power inverter**: IPW65R110CFDA-VB is suitable for high power inverters, such as solar photovoltaic inverters and wind power inverters. The 700V drain-source voltage and 80mΩ on-resistance of this MOSFET enable it to effectively handle high voltage and high current, ensuring high efficiency and stability of the inverter in high power conversion.
2. **Industrial power**: In industrial power systems, such as AC-DC power converters or DC-DC converters, IPW65R110CFDA-VB provides efficient current management and low power loss. Its high withstand voltage and low on-resistance make it very suitable for high power power modules, improving the efficiency and reliability of the overall system.
3. **Electric vehicle charger**: In the charger of electric vehicles, this MOSFET is able to handle the high voltage and high current charging process. Its 700V withstand voltage capability and 80mΩ low on-resistance ensure the efficiency and safety of the charger in high power charging operations.
4. **Power Switching System**: IPW65R110CFDA-VB is suitable for various power switching systems, such as uninterruptible power supply (UPS) and motor drive systems. Its high current handling capability and high withstand voltage characteristics enable it to stably handle high power switching tasks and improve system reliability and performance.
Through its high voltage withstand capability and efficient switching performance, IPW65R110CFDA-VB performs well in multiple high power application fields, meeting the needs of modern high power electronic equipment for efficiency and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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